Samco SiC Power Device Seminar in Shanghai, China will be held on March 13 2017
Samco SiC Power Device Seminar in Shanghai, China
Day: March 13, 2017
Venue: Fudan University Yifu Hall
Registration Fee: Free
● “New Materials and Different Field Technologies are Expanding the Semiconductor World” – key note speech –
ROHM Co., Ltd. Colleague (former managing director）& Tsinghua University Guest Professor
● “Advances in SiC Epitaxy and Devices”
Global Power Technology Co., Ltd. CTO
● “Introduction of Samco”
Samco Inc. Shanghai Office
● “Application Issues and Packaging for Wide Band Gap Devices”
Xi’an Jiaotong University
● “Introduction of Advanced SiC Etching Process and Dry Etching System”
Samco Inc. R&D division
● “Nanofabrication and its Applications in Basic Scientific Study”
This seminar’s main theme is “Process Technology and Applications of New Generation SiC Power Devices”.
Samco provides SiC plasma etching systems and processes to industry customers for SiC trench MOSFET fabrication.
SiC Power Device Seminar Flyer (PDF) >>
If you are interested in attending this seminar, please proceed to the registration form below.
Seminar Registration Form >>