Samco SiC Power Device Seminar in Shanghai, China will be held on March 13 2017

January 16, 2017 Samco 2017 Events, Events

Samco SiC Power Device Seminar in Shanghai, China

Day: March 13, 2017
Venue: Fudan University Yifu Hall
Registration Fee: Free

● “New Materials and Different Field Technologies are Expanding the Semiconductor World” – key note speech –
Hidemi Takasu
ROHM Co., Ltd. Colleague (former managing director)& Tsinghua University Guest Professor
● “Advances in SiC Epitaxy and Devices”
Dr.Feng Zhang
Global Power Technology Co., Ltd. CTO
● “Introduction of Samco”
Jianhui Zhou
Samco Inc. Shanghai Office
● “Application Issues and Packaging for Wide Band Gap Devices”
Prof.Xu Yang
Xi’an Jiaotong University
● “Introduction of Advanced SiC Etching Process and Dry Etching System”
Chikashi Oshige
Samco Inc. R&D division
● “Nanofabrication and its Applications in Basic Scientific Study”
Prof.Yifang Chen
Fudan University

This seminar’s main theme is “Process Technology and Applications of New Generation SiC Power Devices”.
Samco provides SiC plasma etching systems and processes to industry customers for SiC trench MOSFET fabrication.
SiC Power Device Seminar Flyer (PDF) >>

If you are interested in attending this seminar, please proceed to the registration form below.
Seminar Registration Form >>