Scientific Paper on Atomically Ordered Silicon Side-surface Structures From Osaka University Team

July 18, 2016 Samco 2016 Customer, Samco Customer Publication, Si DRIE, Silicon/Dielectrics Etch

Methods of creating and observing atomically reconstructed vertical Si{100}, {110}, and {111} side-surfaces

Azusa N. Hattori1,2, Shohei Takemoto3, Ken Hattori3, Hiroshi Daimon1 and Hidekazu Tanaka1
1 Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
2 JST-PRESTO, Kawaguchi, Saitama 332-0012, Japan
3 Graduate School of Materials Science, Nara Institute of Science and Technology, Ikoma, Nara 630-0101, Japan
Appl. Phys. Express (2016) 9 085501

Samco silicon Deep Reactive Ion Etch (DRIE) system at Osaka University was used for silicon nano-scale structure fabrication.

For our process examples and capabilities of deep silicon etching using Bosch Process, please visit the pages below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV

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