Scientific Paper on Low-temperature PECVD SiO2 Film by MIT Lincoln Laboratory

March 20, 2016 Samco 2016 Customer, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

MICHAEL K. CONNORS1,3, JAMAL E. MILLSAPP2 and GEORGE W. TURNER1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
420, USA.
2 Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7

A 300-nm thick SiO2 film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.

For more details on Samco’s low-temperature PECVD technologies and process capabilities, please visit our featured process solution page below.
Low-temperature PECVD for SiO2 & SiNx Deposition

Top