Scientific Paper on Low-temperature PECVD SiO2 Film by MIT Lincoln Laboratory
Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield
MICHAEL K. CONNORS1,3, JAMAL E. MILLSAPP2 and GEORGE W. TURNER1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
2 Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7
A 300-nm thick SiO2 film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.
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Low-temperature PECVD for SiO2 & SiNx Deposition