Scientific paper on Ga2O3 etching from University of Tsukuba
Hironori Okumura1 and Taketoshi Tanaka2
1 Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8573, Japan
2 Rohm Co. Ltd., Kyoto 615-8585, Japan
Japanese Journal of Applied Physics, 58, 120902 (2019)
Ga2O3 is a compound semiconductor material with a large band-gap energy. Research on this material is still early stage, but more researchers are getting interested in unique material properties. Dry etching and wet etching of β-Ga2O3 was studied in this paper. Samco ICP-RIE system RIE-400iP was used for mesa structure fabrication in ICP etching of chlorine chemistry.
Profile control of compound semiconductor materials is one of our strong points in material processing. We have accumulated process knowledge on GaN, GaAs, InP, Ga2O3, etc.
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