Scientific Paper on a-Si:H and a-Si3N4 Film Properties from University of West Bohemia, Czech Republic

December 25, 2014 Samco 2014 Customer, a-Si PECVD, SAMCO Customer Publication, Silicon/Dielectrics PECVD, SiNx PECVD

Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen

P. Šutta1, P. Calta1, J. Müllerová2, M. Netrvalová1, R. Medlín1, J. Savková1 and V. Vavruňková1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
2 Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)

Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si3N4 multi-layered films.

Periodic Table SiN

For more details of our Si3N4 PECVD process capabilities, please visit the page below.
Si3N4 PECVD Process

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