Scientific Paper on Field-plate Gate Fabrication from Fudan University, China

September 3, 2014 Samco 2014 Customer, Power Devices, SAMCO Customer Publication, Silicon/Dielectrics Etch, SiNx Etch

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Jinhai Shaoa, Jianpeng Liua, Junjie Lia, Sichao Zhanga, Bing-Rui Lua, W. Luand Yifang Chena
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14

Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).

Periodic Table SiN

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

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