Scientific Paper on Field-plate Gate Fabrication from Fudan University, China
Jinhai Shaoa, Jianpeng Liua, Junjie Lia, Sichao Zhanga, Bing-Rui Lua, W. Lub and Yifang Chena
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14
Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).
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AlGaN/GaN Etch for GaN Power Device Fabrication