Scientific Paper on AlGaN/GaN MOSFET Using SiO2 PECVD from Dalian University of Technology Team

June 1, 2014 Samco 2014 Customer, Power Devices, Samco Customer Publication, Silicon/Dielectrics PECVD, SiO2 PECVD

Field isolation for GaN MOSFETs on AlGaN/GaN heterostructure with boron ion implantation

Y Jiang1,2, Q P Wang1,2, K Tamai2, L A Li2, S Shinkai3, T Miyashita4, S-I Motoyama4, D J Wang1,5, J-P Ao2,5 and Y Ohno2,6
1 School of Electronic Science and Technology, Dalian University of Technology, Dalian, Liaoning 116024, People’s Republic of China
2 Institute of Technology and Science, The University of Tokushima, Tokushima 770-8506, Japan
3 Center for microelectronic system, Kyushu Institute of Technology, Fukuoka 820-8502, Japan
4 Research and Development Department, SAMCO Inc., Kyoto 612-8443, Japan
5 Author to whom any correspondence should be addressed.
6 Present address: e-Device, Inc., Sapporo 063-0801, Japan.
Semicond. Sci. Technol. (2014) 29 055002

Samco PECVD system was used for gate oxide formation in GaN power device fabrication. This paper is collaboration work of Dalian University of Technology, The University of Tokushima, Kyushu Institute of Technology and Samco.

SiO2 Periodic Table

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication