Scientific Paper on Microscale Patterning of Si Substrate from Institute of Physical and Chemical Research (RIKEN)

November 20, 2015 Samco 2015 Customer, SAMCO Customer Publication, Si Etch, Silicon/Dielectrics Etch, Silicon/Dielectrics PECVD, SiO2 PECVD

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO2 PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO2 PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

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