Scientific Paper on Nb-TiO2 Dry Etching Process from Tokyo Institute of Technology

July 12, 2014 Samco 2014 Customer, Other Materials Etch, SAMCO Customer Publication, TiO2 Etch

Angled etching of (001) rutile Nb–TiO2 substrate using SF6-based capacitively coupled plasma reactive ion etching

Akihiro Matsutani1, Kunio Nishioka1, Mina Sato1, Dai Shoji1, Daito Kobayashi2, Toshihiro Isobe2, Akira Nakajima2, Tetsu Tatsuma3 and Sachiko Matsushita2
1 Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2 Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
3 Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
Jpn. J. Appl. Phys. (2014) 53 06JF02

Rutile Nb–TiO2 substrates were etched using Samco Reactive Ion Etch (RIE) System. Vertical sidewalls and a smooth surface were successfully achieved.

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