Scientific Paper on Nb-TiO2 Dry Etching Process from Tokyo Institute of Technology
Angled etching of (001) rutile Nb–TiO2 substrate using SF6-based capacitively coupled plasma reactive ion etching
Akihiro Matsutani1, Kunio Nishioka1, Mina Sato1, Dai Shoji1, Daito Kobayashi2, Toshihiro Isobe2, Akira Nakajima2, Tetsu Tatsuma3 and Sachiko Matsushita2
1 Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2 Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
3 Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
Jpn. J. Appl. Phys. (2014) 53 06JF02
Rutile Nb–TiO2 substrates were etched using Samco Reactive Ion Etch (RIE) System. Vertical sidewalls and a smooth surface were successfully achieved.