Scientific paper on low-temperature annealing of InGaZnO transistors by Nara Institute of Science and Technology
Low temperature (150°C) wet oxygen annealing of amorphous InGaZnO thin-film transistors for flexible device applications
M. P. Jallorina, J. P. Bermundo, Y. Ishikawa and Y. Uraoka
Nara Institute of Science and Technology, Graduate School of Materials Science, 8916-5 Takayama, Ikoma, Nara 630-0192 Japan
2017 24th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD), Kyoto, Japan, 2017, pp. 203-204.
Low-temperature processing is required in flexible polymer device fabrication because temperature setting is limited by native melting temperature of polymer materials. In this research, several methods of ultraviolet (UV), ozone (O3) and wet oxygen (Wet O2) were compared to investigate the effects on the device performance. Samco UV-ozone cleaner UV-1 was used for UV, ozone or UV-ozone processes. The results show that UV & O3 annealing at 150°C has higher mobility. Samco UV-ozone cleaners are equipped with stage heating (up to 300degC) and ex-situ ozone generator to promote generation of reactive atomic oxygen in thermal ozone dissociation. For more details of our UV-ozone technologies, please visit the product page.
Samco UV-Ozone Cleaner (Tabletop & Production Models)