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Scientific paper on metal-oxide transistors from Chung-Ang University

Symmetrically Ion-Gated In-Plane Metal-Oxide Transistors
for Highly Sensitive and Low-Voltage Driven Bioelectronics

Jingu Kanga), Young-Woo Janga), Sang Hee Moona), Youngjin Kangb), Jaehyun Kimc), Yong-Hoon Kimb), Sung Kyu Parka)
a) School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 06974, Korea
b) School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea
c) Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, USA
Adv. Sci. 2022, 2103275. https://doi.org/10.1002/advs.202103275

Samco UV-Ozone cleaner UV-1 was used for surface treatment of aluminum to form a monolithic Al2O3 layer in fabrication of metal-oxide transistors with amorphous indium-gallium-zinc oxide (a-IGZO).

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