Reactive Ion Etching of β-FeSi2 with Inductively Coupled Plasma
Takayuki Wakayama, Takashi Suemasu, Tomomi Kanazawa and Hiroyuki Akinaga
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
Jpn. J. Appl. Phys. (2006) 45 L569
Samco ICP-RIE etcher was used for plasma etch recipe development of β-FeSi2 on a silicon substrate using fluorine chemistry.
High etch selectivity of β-FeSi2 against silicon was investigated.
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