Category: GaAs Etch

10 Aug

Scientific Paper on GaAs-based Phase-modulating Lasers

Samco 2016 Customer, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

Phase-modulating lasers toward on-chip integration

Yoshitaka Kurosaka, Kazuyoshi Hirose, Takahiro Sugiyama, Yu Takiguchi & Yoshiro Nomoto
Central Research Laboratory, Hamamatsu Photonics K.K., Shizuoka 434-8601, Japan.
Scientific Reports 6, Article number: 30138 (2016)
doi:10.1038/srep30138

Samco Load-lock ICP-RIE System was used for GaAs-based hole array fabrication in dry etching for phase-modulating laser fabrication.

gaas plasma etching

For our process examples and capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Plasma Etching Process (ICP-RIE)

15 May

Scientific Paper on GaAs Plasma Etching over Tripodal Paraffinic Triptycene Mask from Tokyo Institute of Technology

Samco 2016 Customer, Compound Semi Etch, GaAs Etch, SAMCO Customer Publication

Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

Akihiro Matsutani1, Fumitaka Ishiwari2, Yoshiaki Shoji2, Takashi Kajitani2, Takuya Uehara3, Masaru Nakagawa3, and Takanori Fukushima2
1 Division of Microprocessing Technology Platform, Technical Department, Tokyo Institute of Technology, Yokohama 226-8503, Japan
2 Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
3 IMRAM, Tohoku University, Sendai 980-8577, Japan
Japanese Journal of Applied Physics (2016) Volume 55, Number 6S1

Samco ICP etch system was used for GaAs plasma etching over tripodal paraffinic triptycene (TripC12) mask.
Based on chlorine gas plasma chemistry, vertical and smooth GaAs profile was achieved.

For our process capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

19 Nov

Scientific Paper on GaAs Quantum Heterostructure From Columbia University Team

Samco 2015 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

Fabrication of artificial graphene in a GaAs quantum heterostructure

Diego Scarabelli, Sheng Wang, Aron Pinczuk, and Shalom J. Wind
Department of Applied Physics and Applied Mathematics, Columbia University, 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
Yuliya Y. Kuznetsova
Department of Physics, Columbia University, 538 W. 120th St., 704 Pupin Hall MC 5255, New York, New York 10027
Loren N. Pfeiffer and Ken West
Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544
Geoff C. Gardner and Michael J. Manfra
Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, 525 Northwestern Avenue, West Lafayette, Indiana 47907
Vittorio Pellegrini
Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy and NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
Journal of Vacuum Science & Technology B 33, 06FG03 (2015); doi: 10.1116/1.4932672

SAMCO ICP Etch System at Princeton University was used for anisotropic plasma etching of GaAs/AlGaAs to fabricate vertical quantum hetero-structures.

Periodic Table GaAs

For our process capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

12 Mar

Scientific Paper on GaAs Plasma Etching from MIT

Samco 2014 Customer, Compound Semi Etch, GaAs Etch, SAMCO Customer Publication

Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield

Michael K. Connors, Leo J. Missaggia, William S. Spencer and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420
J. Vac. Sci. Technol. B 32, 021207 (2014)

SAMCO ICP Etching System, RIE-200iP was used for process investigation of GaAs plasma etching.

Periodic Table GaAs

For more details of our GaAs plasma etching technologies, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

14 Jan

Scientific Paper on Terahertz Quantum Cascade Lasers Using GaAs Dry Etch from Paul-Drude-Institut für Festkörperelektronik, Germany

Samco 2014 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

High-temperature, continuous-wave operation of terahertz quantum-cascade lasers with metal-metal waveguides and third-order distributed feedback

M. Wienold, B. Röben, L. Schrottke, R. Sharma, A. Tahraoui, K. Biermann and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany
Opt Express. (2014) 22 (3):3334-48
SAMCO ICP Etch System is used for fabrication of GaAs/AlGaAs terahertz quantum-cascade lasers (THz QCLs).

Periodic Table GaAs

For more details of our GaAs dry etch capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

19 Feb

Scientific Paper on GaAs/AlGaAs Plasma Etching Process Development from MIT

Samco 2013 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, SAMCO Customer Publication

Chamber conditioning process development for improved inductively coupled plasma reactive ion etching of GaAs/AlGaAs materials

Michael K. Connors, Jason J. Plant, Kevin G. Ray, and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology
J. Vac. Sci. Technol. B 31, 021207 (2013)

SAMCO ICP Etching System, RIE-200iP was used for GaAs plasma etching process investigation.

Periodic Table GaAs

For more details of our GaAs plasma etching capabilities, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

07 May

Scientific Paper on Quantum-Cascade Laser Using GaAs Dry Etching by Paul-Drude-Institut

Samco 2012 Customer, AlGaAs Etch, Compound Semi Etch, GaAs Etch, Photonic Devices, SAMCO Customer Publication

Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers

M. Wienold, A. Tahraoui, L. Schrottke, R. Sharma, X. Lü, K. Biermann, R. Hey, and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Optics Express Vol.20, Issue 10, pp. 11207-11217 (2012)

SAMCO ICP Etching System was used for GaAs/AlGaAs dry etching over SiO2 mask in fabrication of Terahertz quantum-cascade lasers (THz QCLs).

Periodic Table GaAs

For our capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

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