Samco’s deposition processes are renowned for their precision and versatility. We offer:
- Atomic Layer Deposition (ALD)
- Anode Plasma Enhanced Chemical Vapor Deposition (PECVD)
- Cathode Plasma Enhanced Chemical Vapor Deposition (PECVD)
Atomic Layer Deposition (ALD)
Atomic Layer Deposition (ALD) is a technology to deposit thin films in the atomic scale, using chemical reactions between sample surfaces and precursors in sequential pulsing.
ALD-Al2O3 deposition
Anode PECVD
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a widely accepted technique within the industry, to form a thin film by generating active radicals and ions on a target substrate by turning a reactive gas into a plasma state and causing a chemical reaction on the target substrate to be deposited.
SiH4-SiNx deposition
Cathode PECVD
Plasma Enhanced Chemical Vapor Deposition (PECVD) is one of the most fundamental processes in microelectronics fabrication. While most of the PECVD equipment manufacturers provide anode-driven PECVD processes, Samco also offers a unique Cathode PECVD system which provides high-rate deposition with improved step coverage.
Samco’s Liquid Source Chemical Vapor Deposition, LSCVD® technique utilizes a liquid TEOS source to deposit SiO2 films at high speed using a low-temperature process.