Samco’s Inductively Coupled Plasma (ICP) etching systems deliver high-density plasma solutions tailored to meet the unique process requirements of both research and production environments. Designed for reliability and durability, our compact systems enable precise etching across a wide range of materials, including III-V compound semiconductors (GaN, GaAs, InP), silicon, SiC, quartz, glass, dielectrics, and metals.
ICP Etching System Lineup
Key Features & Benefits
- High etch rates
- Excellent uniformity
- Excellent substrate bias and ion energy control
- Precise wafer temperature control from -10C to +200C by ESC
- Extensive process library
Applications
Samco’s inductively coupled plasma (ICP) etching systems provide advanced plasma etching solutions for cutting-edge technologies that drive the future, including:
- MicroLEDs for high-efficiency displays and lighting
- Laser diodes for optical communication and sensing
- SiC power devices for energy-efficient power conversion
- GaN RF devices for high-frequency wireless communication
- SAW/BAW filters for precision frequency control
- Capacitors and MEMS devices for miniaturized electronics
The precise fabrication of these devices relies on highly accurate dry plasma etching processes, especially for compound semiconductor materials. Samco’s ICP etching systems, equipped with the patented Tornado ICP™ coil, achieve plasma densities up to 1,000 times higher than conventional capacitive coupled plasma reactive ion etching (CCP-RIE) systems. This innovation ensures exceptional plasma uniformity, enabling high-speed, high-aspect-ratio etching for compound semiconductors, silicon, and metal thin films.
(a) Contour Line of Electric Field by Tornado ICP™
(b) Magnetic Field by Tornado ICP™
By leveraging advanced electromagnetic field simulations, Samco has optimized the Tornado ICP™ coil for outstanding etching performance, making our systems a trusted choice for research and production in industries spanning semiconductors, optoelectronics, and beyond.