
Atomic Layer Deposition (ALD) is a technology to deposit thin films in the atomic scale, using chemical reactions between sample surfaces and precursors in sequential pulsing. Compared to conventional Plasma Enhanced Chemical Vapor Deposition (PECVD) technology, the deposition rate is slow, but conformal thin-film coating can be achieved on the trench and via hole structures in high aspect ratio. Furthermore, there is no physical and electrical damage, which is common in PECVD processes due to ion bombardment, on sample surfaces during ALD processes. Also, various types of thin films (oxides, fluorides, nitrides, metals, and more) can be formed by using a variety of precursor materials.
ALD-Al2O3 deposition

Atomic Layer Deposition (ALD) of aluminum oxide (Al₂O₃) is a precise and versatile process widely used in advanced manufacturing. Al₂O₃ thin films are valued for their superior electrical insulation, chemical and thermal stability, and exceptional conformal coating capabilities, even on high-aspect-ratio structures and complex geometries. These properties make ALD-Al₂O₃ essential in applications such as semiconductor devices, solar cells, optical components, energy storage systems, and biomedical devices.
The self-limiting reaction mechanism of ALD ensures atomic-level precision, enabling highly uniform and reproducible coatings, even on challenging surfaces. Al₂O₃ layers enhance device performance through improved passivation, adhesion, and protection in demanding environments. Samco’s process expertise in ALD supports the production of optimized Al₂O₃ thin films tailored for cutting-edge research and industrial applications.
Deposition of 100 nm thickness to 32 aspect ratio hole.
Products
AlOx film was deposited on trench patterns, demonstrating conformal step coverage along the sidewalls and bottom.