Samco Announces Sale of Advanced Etching Systems to III-V Lab in Europe
Samco Inc. (TSE: 6387), a leading manufacturer of semiconductor processing equipment, is excited to announce the sale of two of…
We are Samco Inc.
Established in 1979, Samco began as a garage start-up in Kyoto, aiming to provide cutting-edge semiconductor device and electronic component manufacturing systems globally. Over time, we have evolved into a leading global corporation with state-of-the-art technological capabilities and a widespread international presence. Our commitment to growth prioritizes “thin-film technology” as our core expertise.
Date
March 26, 2025
–
March 28, 2025
Location
Shanghai New International Expo Centre
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Featured Solutions
Gallium Nitride (GaN) Etching
GaN is a III-V compound semiconductor material which has wide band gap and high electron mobility. Applications include Vertical Power Devices, HB LEDs, and more.
Indium Phosphide (InP) Etching
InP is a compound semiconductor material of III-V group. This material has a wide band gap and a high electron mobility.
Gallium Arsenide (GaAs) Etching
GaAs is a III–V compound direct-gap semiconductor used for applications including optoelectronics and radio-frequency (RF) devices.
SiO2 deposition
SiO2 properties include excellent abrasion resistance, good electrical insulation, low thermal expansion and high thermal stability, making it ideal for a wide range of applications.
SiNx deposition
SiNx properties include low moisture and oxygen permeation, good electrical insulation and low thermal expansion. This material is used in a variety of applications in device fabrication.
Silicon Deep Reactive Ion Etching (DRIE)
The Bosch Process enables deep silicon etching process solutions with high aspect ratio etching and excellent selectivity, ideal for MEMS and packaging applications.
We deliver cutting-edge process equipment designed for precise film deposition, high-performance etching, and efficient surface cleaning. Our solutions cater to both R&D and production needs across diverse applications, including compound semiconductors, quantum computing, optoelectronics, MEMS, microfluidics, power devices, RF devices, and more.
Leveraging our extensive process library, we provide comprehensive solutions for a wide range of applications. These include advanced deposition methods like ALD and low-temperature PECVD, precise etching techniques for materials such as GaN, GaAs, InP, SiC, wide bandgap semiconductors, 2D materials, and deep silicon structures, as well as innovative surface treatment processes for surface modification and metal reduction.