Category: 2010 Customer
Miniature Fuel Cell with Monolithically Fabricated Si Electrodes-Reduction of Pt Usage by Pd-Pt Catalyst
Takayuki Honjo, Taku Matsuzaka and Masanori Hayase
Tokyo University of Science, Noda, Chiba, Japan
Presented at Power MEMS 2010, Nov 30-Dec 3, Leuven, Belgium
Samco RIE Etcher was used for silicon plasma etching over Cu mask in fuel channel fabrication of miniature fuel cells.
For more details of our silicon etching technologies, please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process
Low-frequency Noise Measurements of AlGaN/GaN Metal-oxide-semiconductor Heterostructure Field-effect Transistors with HfAlO Gate Dielectric
C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, Ü. Özgür, H. Morkoç, . Yang, V. Misra, and P. H. Handel
Microelectronics Materials and Device Laboratory, Virginia Commonwealth University
In: IEEE Electron Device Letters, Vol. 31, No. 9, 5540258, 09.2010, p. 1041-1043.
Mesa isolation of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) was performed using a SAMCO ICP Etch System RIE-101iPH using a Cl based chemistry.
Virginia Commonwealth University is one of Samco’s customers using our process equipment for AlGaN & GaN plasma etching process in device fabrication.
Virginia Commonwealth University Microelectronics Materials & Device Laboratory.
Samco offers process solutions for AlGaN/GaN power device fabrication using precise AlGaN & GaN plasma etching technologies and SiO2 PECVD technologies for an passivation layer deposition. For more details on the process solutions, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication