Process Solutions for RF Device Manufacturing
SAMCO Inc. > Markets > Process Solutions for RF Device Manufacturing
1. Epi Growth
![Epi Growth](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-01.gif?fit=350%2C350&ssl=1)
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
2. Mask Fabrication for Ion Implantation
![Mask Fabrication for Ion Implantation](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-02.gif?fit=350%2C350&ssl=1)
![Cathode PECVD chamber](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/11/Cathode-CVD-cartoon.jpg?fit=472%2C350&ssl=1)
![High deposition rate of cathode PECVD](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/11/Cathode-PECVD-deposition-rate.jpg?fit=350%2C350&ssl=1)
Samco’s unique cathode PECVD technology enables high-rate SiO2 deposition over 150 nm/min.
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
3. Hard Mask Patterning by SiO2 Etching
![Hard Mask Patterning by SiO2 Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-03.gif?fit=350%2C350&ssl=1)
![Tornado ICP Coil](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/SAMCO-Tornado-ICP-Coil.jpg?fit=350%2C350&ssl=1)
![SiO2 Etch Uniformity over 200mm](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/SiO2-Etch-Uniformity-1.jpg?fit=350%2C350&ssl=1)
Unique Tornado ICP coil provides stable high-density plasma discharge for uniform SiO2 etching over 200 mm.
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
4. Photoresist Ashing
![Photoresist Ashing](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-04.gif?fit=350%2C350&ssl=1)
![Robot Wafer Transfer](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/Robot-Wafer-Transfer.jpg?fit=350%2C350&ssl=1)
![N2 purge cassette chamber](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/N2-purge-cassette-chamber.jpg?fit=350%2C350&ssl=1)
State-of-the-art wafer handling robot and double cassettes improve throughput of photoresist ashing process.
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
5. Ion Implantation
![Ion Implantation](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Manufacturing-Process-6.jpg?fit=350%2C320&ssl=1)
6. Hard Mask Removal
![Hard Mask Removal](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Manufacturing-Process-7.jpg?fit=350%2C320&ssl=1)
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
7. Recess Etching
![Recess Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-07-01.gif?fit=350%2C350&ssl=1)
![GaAs Recess Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/GaAs-Recess-Etching.jpg?fit=350%2C350&ssl=1)
Low damage plasma etching of GaAs layer was performed over photoresist.
Etch Selectivity : 67 (over photoresist)
GaAs Etch Rate : 102 nm/min
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
8. Photoresist Ashing
![Photoresist Ashing](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-08.gif?fit=350%2C350&ssl=1)
9. Electrode Formation
![Electrode Formation](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-09-01.gif?fit=350%2C350&ssl=1)
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
10. Passivation Deposition by PECVD
![SiO2 Passivation Deposition by PECVD in RF Device Manufacturing Process](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-10-1.gif?fit=350%2C350&ssl=1)
![SiO2 deposition uniformity](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/SiO2-deposition-uniformity.jpg?fit=350%2C350&ssl=1)
Batch processing of 6 x Ø4-inch wafers show high uniformity of SiO2 deposition.
Batch-to-batch Deposition Uniformity : ±0.2 %
Deposition Rate : 12.2 nm/min
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
11. Contact Hole Formation by SiO2 Etching
![Contact Hole Formation by SiO2 Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-11.gif?fit=350%2C391&ssl=1)
![Robot Arm Wafer Handling](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Robot-arm-wafer-handling-2.jpg?fit=350%2C350&ssl=1)
![SiO2 Etching for Contact Hole Formation](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/SiO2-etching-for-contact-hole-formation.jpg?fit=350%2C350&ssl=1)
Double Cassettes and multi-joint robot wafer handling of Samco’s atmospheric cassette RIE systems improve throughput of SiO2 etching for contact hole formation. The systems show stable SiO2 etch uniformity around ± 1.5% over 25 x ø4”wafers.
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
12. Glue Wafer on Support
![Glue Wafer on Support](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Manufacturing-Process15.jpg?fit=350%2C320&ssl=1)
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
13. Via Hole Etching
![Via Hole Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-13.gif?fit=350%2C350&ssl=1)
![ICP Coil for SiO2 Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/09/ICP-Coil-for-SiO2-Etching.jpg?fit=350%2C350&ssl=1)
High-power planar ICP coil enables high-rate etching of compound semiconductors including GaAs and SiC for via hole fabrication.
![SiC Via Hole Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/SIC-Via-Hole-Etching.jpg?fit=350%2C350&ssl=1)
SiC Via Hole
Ø60 µm hole pattern
Etch Rate : 1.0 µm/min
Sample Temperature : lower than 150°C
Selectivity : 95 (over Ni mask)
Etch Depth : 89.2 µm
![Arrow](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Arrow.jpg?fit=50%2C92&ssl=1)
14. Dicing and Packaging
![GaAs Plasma Dicing for RF Device Fabrication](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/RF-Device-Process-14.gif?fit=350%2C350&ssl=1)
![Plasma Dicing](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/Plasma-Dicing.jpg?fit=350%2C350&ssl=1)
![GaAs Plasma Dicing](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/03/GaAs-Dicing-3.jpg?fit=350%2C350&ssl=1)
Small GaAs wafers can be processed in plasma scribing without chipping and clacking for higher yields.