Metal Organic Chemical Vapor Deposition (MOCVD) systems are designed for the growth of multilayer single crystal nitride layers for compound semiconductor devices such as LEDs and LDs. SAMCO possesses a wealth of expertise with MOCVD systems.
Applicable to Production
Reduces Expensive Gas Consumption
Excellent Epi Uniformity
Easy-to-use Interface
PECVD Systems
Utilized in compound semiconductor and silicon device fabrication, Plasma Enhanced Chemical Vapor Deposition (PECVD) systems are designed for the deposition of insulation and passivation films. SAMCO PECVD systems can deposit high-quality silicon-based thin films (SiO2, Si3N4, SiOxNy, a-Si:H). SAMCO offers anode PECVD systems and cathode PECVD systems depending on customer’s process goals.
Multiple System Lineup for R&D and Production
Processes Up to 450 mm Wafers
Batch Processing With a Carrier
Low Plasma Damage
High Deposition Uniformity
Low Temperature Deposition
Excellent Step Coverage
Controllable Film Stress
High-speed Deposition
Controllable Wet Etch Rate
SAMCO provides SiC CVD Systems of Epiluvac, a Swedish company. Combining with SAMCO’s SiC etching solutions, the systems offer turn-key process solutions for next-generation power device fabrication.
Processing up to 150 mm
Process Temperature Range over 1700°C
As semiconductor processing technologies evolve, the era of atomic-scale processing is coming to achieve high performance of devices. SAMCO ALD system is suitable for atomic-scale processing of various devices including next-generation power devices and nano-electronics. The system is capable of various material deposition with highly reproducilbe thickness control with a high aspect ratio.
Process up to Ø8″ Wafers
Chamber Heating up to 500°C
High-speed Gas Switching
Designed for Reduction of Precursor Consumption