Metal Organic Chemical Vapor Deposition (MOCVD) systems are designed for the growth of multilayer single crystal nitride layers for compound semiconductor devices such as LEDs and LDs. SAMCO possesses a wealth of expertise with MOCVD systems.
Applicable to Production
Reduces Expensive Gas Consumption
Excellent Epi Uniformity
Utilized in compound semiconductor and silicon device fabrication, Plasma Enhanced Chemical Vapor Deposition (PECVD) systems are designed for the deposition of insulation and passivation films. Samco PECVD systems can deposit high-quality silicon-based thin films (SiO2, Si3N4, SiOxNy, a-Si:H). Samco offers anode PECVD systems for high-quality thin film deposition and cathode PECVD systems for high-rate deposition depending on customer’s process goals.
Multiple System Lineup for R&D and Production
Processes Up to 450 mm Wafers
Batch Processing With a Carrier
Low Plasma Damage
High Deposition Uniformity
As semiconductor processing technologies evolve, the era of atomic-scale processing is coming to achieve high performance of devices. Samco ALD system is suitable for atomic-scale processing of various devices including next-generation power devices and nano-electronics. The system is capable of various material deposition with highly reproducilbe thickness control with a high aspect ratio.
Process up to Ø8″ Wafers
Chamber Heating up to 500°C
High-speed Gas Switching
Designed for Reduction of Precursor Consumption