Atomic Layer Deposition (ALD) System for Thin-film Oxide and Metal Deposition
Atomic Layer Deposition (ALD) is a technology to deposite thin films in atomic scale, and it uses chemical reaction between sample surfaces and precursors in sequential pulsing. Compared to conventional Plasma Enhanced Chemical Vapor Deposition (PECVD) technology, deposition rate is slow, but conformal thin film coating can be achieved on trench and via hole structures in high aspect ratio. Furthermore, there is no physical and electrical damage, which is common in PECVD processes due to ion bombardment, on sample surfaces during ALD processes. Also, various types of thin films (oxides, fluorides, nitrides, metals and more) can be formed by using a variety of precursor materials.
The SAMCO AL-1 is a highly flexible open-loaded thermal ALD tool for R&D use. This system is the result of SAMCO’s ALD technology development since 80’s. Multiple gas lines and liquid sources offer a wide range of material processing solutions for various research fields including next-generation power devices and nano-electronics.
The system is capable of chamber heating up to 500°C. Also, the system is capable of high-speed gas switching. These features realize repeatable and controllable processes. Depositing one atomic layer at a time enables to precisely control the film thickness at the single Å level. Step coverage is extremely good, and it is possible to deposit on high-aspect trenches and structures. For AlOx film deposition, coverage of trench patterns was achieved with an aspect ratio higher than 40. Also, the film showed the dielectric strength of 7.5 MV/cm.
Furthermore, the system is designed to minimize precursor consumption, which helps minimize consumable costs in operating an ALD system. For easy maintenance, the system has a protection shield to prevent deposition on the heater.
AlOx film was deposited on trench patterns.
The film showed conformal step coverage on the sidewalls and bottom of the patterns.
Open Area : 1.78 µm
Trench Depth : 71.8 µm
Aspect Ratio : 40.3