Product Lineup
Samco provides Silicon Deep Reactive Ion Etching (DRIE) systems for MEMS device fabrication and TSV via-hole etching.
Samco was the first Japanese semiconductor process equipment manufacturer to offer DRIE systems using the Bosch Process.
Our systems have competitive process capabilities, and the product lineup covers both R&D and production.
For high-volume device manufacturing, double process chamber option is available.
Load-lock DRIE System
(up to ø4”)
![deep rie system](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Load-lock-DRIE-System.jpg?fit=350%2C350&ssl=1)
Processing both ø4” Si and glass substrates
Load-lock DRIE System
(up to ø8”)
![Silicon DRIE System](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Silicon-DRIE-Systems.jpg?fit=350%2C350&ssl=1)
Capable of high-rate Si etching of ø8” wasfers
Cassette-load DRIE System
(up to ø8”)
![Cassette-to-Caesette DRIE System](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Cassette-toCassette-DRIE-System.jpg?fit=350%2C350&ssl=1)
Suitable for high-volume wafer processing
Process Examples
Samco DRIE systems offer etching solutions of deep Si etching and high-rate SiO2 etching.
For more information, please visit our Featued Solution Page on Si DRIE and Process Data Page.
![High-rate Silicon Deep Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/High-rate-silicon-deep-etching.jpg?fit=350%2C350&ssl=1)
High-rate Si deep etching
Etch Rate : 55 µm/min
Pattern Width : 50 µm
![Si etching with high aspect ratio](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/02/Si-etching-with-high-aspect-ratio.jpg?fit=350%2C350&ssl=1)
Si etching with high aspect ratio
Aspect Ratio : 40
Pattern Width : 2.5 µm
Etch Depth : 100 µm
Scallop Size : less than 100 nm
![Oxide Mask Fabrication](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/01/SiO2-Mask-Fabrication-5.jpg?fit=350%2C350&ssl=1)
Anisotropic SiO2 etching
4 µm width L/S pattern
Etch Depth : 6.5 µm
Etch Rate : 325 nm/min
System Features
Samco’s DRIE Systems are designed to enhance process capability and maximize throughput.
Furthermore, the systems are designed to reduce the downtime for maintenance operation.
High-density ICP plasma source
![ICP Coil for Silicon DRIE](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/09/ICP-Coil-for-Silicon-DRIE.jpg?fit=350%2C350&ssl=1)
High power ICP source generates a repeatable high density plasma and enables high-rate Si etching of max. 55 µm/min .
High-speed Gas Switching
![High-speed Gas Switching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/09/High-speed-Gas-Switching.gif?fit=350%2C350&ssl=1)
Fast gas switching (~ 0.1 sec) allows smooth sidewalls with less scallops.
Optional SiO2 Etch Kit
![ICP Coil for SiO2 Etching](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/09/ICP-Coil-for-SiO2-Etching.jpg?fit=350%2C350&ssl=1)
Optional ICP coil enables high-speed SiO2 etching.
Designed for Easy Maintenance
![Designed for Easy Maintenance](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/09/Easy-Maintenance.jpg?fit=350%2C350&ssl=1)
Rotatable touchcreen enables the system status check during maintenance operations.
Wafer Size Adjustment
![Wafer Size Adjustment](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/09/Wafer-Size-Adjustment.jpg?fit=350%2C350&ssl=1)
Adjustment kit enables processing of wafers with different sizes.
Throughput Booster
![Throughput Booster for DRIE System](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2015/09/Throughput-Booster-for-DRIE-System.jpg?fit=349%2C349&ssl=1)
Before being transferred into the reaction chamber, the wafer picks up the wafer edge protection ring from within the “booster chamber”