Scientific Paper on β-Ga2O3 MOSFET Fabrication from U.S. Naval Research Laboratory

November 16, 2016 Samco 2016 Customer, SAMCO Customer Publication, Surface Treatment, UV-Ozone

Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric

Marko J. Tadjerz, Nadeemullah A. Mahadik, Virginia D. Wheeler, Evan R. Glaser, Laura Ruppalt, Andrew D. Koehler, Karl D. Hobart, Charles R. Eddy Jr. and Fritz J. Kub
United States Naval Research Laboratory, Washington, DC 20375, USA
ECS J. Solid State Sci. Technol. 2016 volume 5, issue 9, P468-P470

Gallium Oxide (Ga2O3) is a wide bandgap material with high breakdown voltage, and it is a promising material for power device applications. Compared to other wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), the device research using this material is still primitive. However, β-Ga2O3 substrates are commercially available, and more and more researchers are getting interested in its unique material properties.

Here, β-Ga2O3 MOSFET was fabricated using commercially available β-Ga2O3 substrates. Samco UV-Ozone Cleaner at United States Naval Research Laboratory was used for surface cleaning of SiO2/Si substrate in sample preparation.

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