Communication—A (001) β-Ga₂O₃ MOSFET with +2.9 V Threshold Voltage and HfO₂ Gate Dielectric

Marko J. Tadjerz, Nadeemullah A. Mahadik, Virginia D. Wheeler, Evan R. Glaser, Laura Ruppalt, Andrew D. Koehler, Karl D. Hobart, Charles R. Eddy Jr. and Fritz J. Kub
United States Naval Research Laboratory, Washington, DC 20375, USA
ECS J. Solid State Sci. Technol. 2016 volume 5, issue 9, P468-P470

Gallium Oxide (Ga₂O₃) is a wide bandgap material with high breakdown voltage, and it is a promising material for power device applications. Compared to other wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), the device research using this material is still primitive. However, β-Ga₂O₃ substrates are commercially available, and more and more researchers are getting interested in its unique material properties.

Here, β-Ga₂O₃ MOSFET was fabricated using commercially available β-Ga₂O₃ substrates. Samco UV-Ozone Cleaner at United States Naval Research Laboratory was used for surface cleaning of SiO₂/Si substrate in sample preparation.