Scientific Paper on β-Ga2O3 MOSFET Fabrication from U.S. Naval Research Laboratory
Marko J. Tadjerz, Nadeemullah A. Mahadik, Virginia D. Wheeler, Evan R. Glaser, Laura Ruppalt, Andrew D. Koehler, Karl D. Hobart, Charles R. Eddy Jr. and Fritz J. Kub
United States Naval Research Laboratory, Washington, DC 20375, USA
ECS J. Solid State Sci. Technol. 2016 volume 5, issue 9, P468-P470
Gallium Oxide (Ga2O3) is a wide bandgap material with high breakdown voltage, and it is a promising material for power device applications. Compared to other wide bandgap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN), the device research using this material is still primitive. However, β-Ga2O3 substrates are commercially available, and more and more researchers are getting interested in its unique material properties.
Here, β-Ga2O3 MOSFET was fabricated using commercially available β-Ga2O3 substrates. Samco UV-Ozone Cleaner at United States Naval Research Laboratory was used for surface cleaning of SiO2/Si substrate in sample preparation.