Scientific Paper on Quantum-Cascade Laser Using GaAs Dry Etching by Paul-Drude-Institut

May 7, 2012 Samco 2012 Customer, AlGaAs Etch, Compound Semiconductor Etching, GaAs Etch, Photonic Devices, Samco Customer Publication

Lateral distributed-feedback gratings for single-mode, high-power terahertz quantum-cascade lasers

M. Wienold, A. Tahraoui, L. Schrottke, R. Sharma, X. Lü, K. Biermann, R. Hey, and H. T. Grahn
Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany
Optics Express Vol.20, Issue 10, pp. 11207-11217 (2012)

SAMCO ICP Etching System was used for GaAs/AlGaAs dry etching over SiO2 mask in fabrication of Terahertz quantum-cascade lasers (THz QCLs).

Periodic Table GaAs

For our capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)