Scientific Paper on InGaN/GaN LED Using InGaN Plasma Etching by National Cheng Kung University, Taiwan

September 5, 2016 September 5, 2016 Samco 2016 Customer, Compound Semiconductor Etching, InGaN Etch, LEDs

Piezoelectric effect on compensation of the quantum-confined Stark effect in InGaN/GaN multiple quantum wells based green light-emitting diodes

Sheng-Chieh Tsai^{a, b}, Cheng-Hsueh Lu^b and Chuan-Pu Liu^a
^a Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
^b Research Center, Genesis Photonics Incorporation, Tainan 74144, Taiwan
Nano Energy (2016)

ingan plasma etching

Samco ICP etch system was used for InGaN plasma etching in quantum well structure fabrication.

Samco has plasma etching process knowledge of III-V compound semiconductor materials including GaN, GaAs, InP and more. Please visit our process data page for more details of our process capabilities.

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