Pinhole electrical conductivity in polycrystalline Si on locally etched SiNy/SiOx passivating contacts for Si solar cells

C.L. Anderson ^{a b}, H.L. Guthrey ^b, W. Nemeth ^b, C.-S. Jiang ^b, M.R. Page ^b, P. Stradins ^{a b}, S. Agarwal ^{a b}

^a
Department of Chemical and Biological Engineering, Colorado School of Mines, Golden, CO, 80401, USA
^b
National Renewable Energy Laboratory, Golden, CO, 80401, USA

Materials Science in Semiconductor Processing, Volume 165, 2023, 107655,
ISSN 1369-8001,
https://doi.org/10.1016/j.mssp.2023.107655.

Boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts was studied for monocrystalline Si (c-Si) solar cell application. Samco open-load RIE system RIE-10NR was used for silicon etching.