GaSb Dry Etching Process (ICP-RIE)
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Material Properties and Applications of Gallium Antimonide (GaSb)
Gallium Antimonide (GaSb) is an III-V compound semiconductor or of antimony and gallium.
Bandgap : 0.726 eV (300K)
Electron Mobility : 3000 cm2/(V*s) (300 K)
Thermal Conductivity : 0.32 W/(cm*K) (300 K)
Compared to other III-V materials such as Gallium Arsenide (GaAs) and Indium Phosphide (InP) which are widely used for device production, material processing technology of GaSb is still under investigation.
![GaSb periodic table](https://i0.wp.com/www.samcointl.com/opto/wp-content/uploads/2016/11/GaSb-Periodic-Table-2.png?fit=800%2C487&ssl=1)
Typically, GaSb is used for laser diode and photo diode fabrication. GaSb based solar cell is also being investigated by some researchers. One of the cutting-edge research topics using this material is topological insulator for quantum device fabrication. While there are some materials which were reported as a potential topological insulator, GaSb attracts more attention from researchers as well as Mercury Telluride (HgTe). Heterojunction of InAs (Indium Arsenide) and GaSb behaves as a two-dimensional topological insulator, and topological states of InAs/GaSb quantum wells are being investigated.
System Lineup for GaSb Plasma Etching
ICP Etch Systems
– Efficient ICP plasma source for high-quality plasma etching
– Optional optical/Interferometric end-point detection
– Easy-to-use touch-panel GUI
![ICP Etch Systems for GaSb Plasma Etching](https://i0.wp.com/www.samcointl.com/opto/opto/wp-content/uploads/2016/02/Atmospheric-ICP-Etch-Systems-3.jpg?resize=350%2C350&ssl=1)