Material Properties and Applications of Gallium Antimonide (GaSb)
Gallium Antimonide (GaSb) is an III-V compound semiconductor or of antimony and gallium.
Bandgap : 0.726 eV (300K)
Electron Mobility : 3000 cm2/(V*s) (300 K)
Thermal Conductivity : 0.32 W/(cm*K) (300 K)
Compared to other III-V materials such as Gallium Arsenide (GaAs) and Indium Phosphide (InP) which are widely used for device production, material processing technology of GaSb is still under investigation.
Typically, GaSb is used for laser diode and photo diode fabrication. GaSb based solar cell is also being investigated by some researchers. One of the cutting-edge research topics using this material is topological insulator for quantum device fabrication. While there are some materials which were reported as a potential topological insulator, GaSb attracts more attention from researchers as well as Mercury Telluride (HgTe). Heterojunction of InAs (Indium Arsenide) and GaSb behaves as a two-dimensional topological insulator, and topological states of InAs/GaSb quantum wells are being investigated.
GaSb Dry Etching
GaSb plasma etching in chlorine chemistry was performed using Samco ICP plasma etcher.
GaSb etch rate of 2.2 µm/min was achieved.
Photo courtesy of University of Delaware
There are several papers which performed GaSb plasma etching using our plasma etching systems.