Scientific Paper on Anti-reflective Surface Fabrication by Si Plasma Etch from Yokohoma National University Team

November 10, 2016 Samco 2016 Customer, Samco Customer Publication, Si Etch, Silicon/Dielectrics Etch

Anti-reflective surfaces: Cascading nano/microstructuring

Yoshiaki Nishijima1 Ryosuke Komatsu1 Shunsuke Ota1, Gediminas Seniutinas2 Armandas Balčytis2,3 and Saulius Juodkazis2
1 Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-Ku, Yokohama 240-8501, Japan
2 Centre for Micro-Photonics, Faculty of Engineering and Industrial Sciences, Swinburne University of Technology, Hawthorn, VIC 3122, Australia
3 Institute of Physics, Center for Physical Sciences and Technology, 231 Savanoriu¸ Avenue, LT-02300 Vilnius, Lithuania
APL PHOTONICS 1, 076104 (2016)

Anti-reflective surfaces were created employing plasma etching technologies. Samco ICP-RIE etcher was used for black silicon plasma etching (b-Si) to fabricate nanospike structures using fluorine chemistry.

Silicon Periodic Table

For more process capabilities of our silicon plasma etching including the Bosch Process Etching, please visit the process data pages below.

Silicon Plasma Etching (RIE etch or ICP-RIE)
Deep Silicon Trench/Via Hole Etching using the Bosch Process

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