> Etching Systems
> RIE (Reactive Ion Etching) Systems
> RIE-200LC (Cassette-to-Cassette)
Dimensions:
Main Unit: 1206(W) x 2000(D) x 2003(H) mm
Process single wafers up to 8" inches or batches of multiple wafers
The process chamber is isolated from the environment by a load-lock chamber, which improves process reliability and accuracy
The wafers are stored in a vacuum cassette chamber which prevents after etch corrosion when using chlorine gases and improves throughput
Electrostatic chuck for wafer clamping and active substrate temperature control
High speed and uniform multi-port evacuation system
Superior anisotropic etching performance for silicon films (Si, Poly-Si, SiO2, Si3N4 etc)
Etching of various metal films
Etching of compound semiconductors such as GaAs, GaN, etc.
Production of waveguide devices
Fabrication of micromachines