SAMCO was the first of Japan's semiconductor process equipment manufacturers to obtain a Bosch Process license. Using our latest patented Tornado ICP® technology and harnessing the Bosch Process, SAMCO's DRIE systems have proven effective in deep, vertical, high-speed silicon etching for both R&D and manufacturing.
Benefits of SAMCO Si DRIE systems:
- Industry leading etch rates of over 50 μm/min
- High selectivity of over 250:1 (Si:Photoresist)
- Uniformity of ±5% or better (4, 6, and 8" wafers)
- High aspect ratio (greater than 40:1)
- Low scalloping, smooth sidewall profile (less than 0.1 μm scallops)
- Patented, dual frequency SOI anti-notch etching technology
- Unique "anti-tilt" feature that ensures high uniformity
- Electrostatic chuck and helium backside cooling (for wafer temperature control)
- ICP source can be modified for DRIE of SiO2
DRIE applications: MEMS (Micro Electro Mechanical Systems), 3D packaging, TSV (Through Silicon Via), and the manufacturing of ink jet printer heads, sensors, and medical devices such as μTAS.
For DRIE process data, click here
Thinking deep? Think SAMCO.
- Designed for R&D - easy to use, easy to maintain, low-cost / high-performance package!
- Up to 4" wafers
- Deep Silicon etching (Bosch)
- ESC and helium backside cooling
- High rate Bosch etching system for up to 8" wafers
- High-speed gas line system for improved response and smoother sidewalls
- ESC and helium backside cooling
- Unique stage design for fast cleaning and reduced downtime
- Process up to 8" wafers
- Automatic cassette to cassette wafer handling
- ESC and helium backside cooling
- High-speed gas line system for improved response and smoother sidewalls
> Etching Systems
> DRIE (Deep Reactive Ion Etching) Systems
