Samco Inc. Completes Construction of New Advanced Technology Development Center
Samco opens its new Advanced Technology Development Center in Kyoto, featuring a Class 1,000 cleanroom to drive next-gen semiconductor innovation.
We are Samco Inc.
Established in 1979, Samco began as a garage start-up in Kyoto, aiming to provide cutting-edge semiconductor device and electronic component manufacturing systems globally. Over time, we have evolved into a leading global corporation with state-of-the-art technological capabilities and a widespread international presence. Our commitment to growth prioritizes “thin-film technology” as our core expertise.
Date
September 10, 2025
–
September 12, 2025
Location
Shenzhen World – Exhibition & Convention Center
TOWA and Samco to Host “Kyoto Day” in New Delhi Ahead of SEMICON India 2025
Kyoto Day in New Delhi brings TOWA and Samco together to showcase semiconductor innovations ahead of SEMICON India 2025.
Simultaneous Double-sided Wafer Deposition via Plasma Enhanced ALD
Report investigating simultaneous dual-surface deposition of AlOx films on silicon wafers using the Plasma Enhanced Atomic Layer Deposition (PEALD) technique.
Samco Inc. donates to the Red Cross Society
Samco Inc. donates 10 million JPY to the Japanese Red Cross Society, continuing its annual support for disaster relief and…
Ohio State University Students Visit Samco Inc. Headquarters
Samco welcomed Ohio State University students to Kyoto HQ. The students explored Samco’s history and learned about the semiconductor manufacturing…
Institute of Science Tokyo: Professor Yasuyuki Miyamoto
Advancing high-speed transistors with InP and GaN, Professor Yasuyuki Miyamoto explores the future of compound semiconductors and shares insights on…
Special Lecture on GaN Technology by Nagoya University Professor Jun Suda
Professor Jun Suda of Nagoya University gave a special lecture at Samco on GaN devices, sharing insights on materials, processing,…
Samco featured in TIME Magazine: Taking a Quantum Leap
We are pleased to share that Samco Inc. has been featured in TIME magazine. In the article “Taking a Quantum…
Indian Students from Kyoto University’s KU-STAR Program Visit Samco
Samco welcomed KU-STAR Program students from top Indian universities for a factory tour, tech talk, and cultural exchange during their…
Featured Solutions
Gallium Nitride (GaN) Etching
GaN is a III-V compound semiconductor material which has wide band gap and high electron mobility. Applications include Vertical Power Devices, HB LEDs, and more.
Indium Phosphide (InP) Etching
InP is a compound semiconductor material of III-V group. This material has a wide band gap and a high electron mobility.
Gallium Arsenide (GaAs) Etching
GaAs is a III–V compound direct-gap semiconductor used for applications including optoelectronics and radio-frequency (RF) devices.
Atomic Layer Etching (ALE)
ALE enables atomic-scale precision for controlled material removal, ensuring uniformity and selectivity in advanced semiconductor fabrication.
SiO2 deposition
SiO2 properties include excellent abrasion resistance, good electrical insulation, low thermal expansion and high thermal stability, making it ideal for a wide range of applications.
SiNx deposition
SiNx properties include low moisture and oxygen permeation, good electrical insulation and low thermal expansion. This material is used in a variety of applications in device fabrication.
Silicon Deep Reactive Ion Etching (DRIE)
The Bosch Process enables deep silicon etching process solutions with high aspect ratio etching and excellent selectivity, ideal for MEMS and packaging applications.
Atomic Layer Deposition (ALD)
ALD delivers uniform, pinhole-free films with precise thickness control, making it ideal for high-aspect-ratio and complex device structures.
We deliver cutting-edge process equipment designed for precise film deposition, high-performance etching, and efficient surface cleaning. Our solutions cater to both R&D and production needs across diverse applications, including compound semiconductors, quantum computing, optoelectronics, MEMS, microfluidics, power devices, RF devices, and more.
