Scientific Paper on Metallic Infrared Filter Fabrication Using Al Plasma Etching by NIMS, Japan

July 28, 2013 Samco 2013 Customer, Al Etch, Other Materials Etch, Photonic Devices, SAMCO Customer Publication, Silicon/Dielectrics Etch, SiO2 Etch

Structural Optimization of Metallic Infrared Filters Based on Extraordinary Optical Transmission

Makoto Ohkado1, Tsuyoshi Nomura1, Atushi Miura1, Hisayoshi Fujikawa1, Naoki Ikeda2, Yoshimasa Sugimoto2 and Shinji Nishiwaki3
1Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan
2National Institute for Material Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
3Kyoto University, Yoshida Honmachi, Sakyo-ku, Kyoto, Kyoto 606-8501, Japan
Transactions of the Materials Research Society of Japan (2013) 38, No. 2 p. 167-170

SiO2 plasma etching and Al plasma etching were performed using Samco RIE system and ICP etch system, respectively to fabricate hole array structures of the infrared filter.

For more details of our SiO2 dry etching capabilities, please visit the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)

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