Category: SiO2 Etch
Scientific paper on GaP grating fabrication from University of Ottawa
Scalable Fabrication of Nanogratings on GaP for Efficient Diffraction of Near-Infrared Pulses and Enhanced Terahertz Generation by Optical Rectification
Mohammad Bashirpour1, Wei Cui1, Angela Gamouras1,2 and Jean-Michel Ménard1,2
1 Department of Physics, University of Ottawa, Ottawa, ON K1N 7N9, Canada
2 National Research Council Canada, Ottawa, ON K1A 0R6, Canada
Crystals 2022, 12, 684. https://doi.org/10.3390/cryst12050684
Samco RIE system RIE-10NR was used for SiO2 hardmask patterning using photoresist mask. Then, Samco ICP-RIE system was used for GaP etching using the SiO2 hardmask for wafer-scale fabrication of a surface phase grating with submicron feature sizes.
Scientific paper on high-selectivity SiO2 etching by Fudan University
Highly selective etch of silicon dioxide with tungsten hard mask deposited by PVD process
Yuanhui Fang, Jian Zhang, Yu-Long Jiang
School of Microelectronics, Fudan University, Shanghai 200433, China
2018 18th International Workshop on Junction Technology (IWJT), Shanghai, 2018, pp. 1-3.
Samco RIE Plasma Etching Equipment was used for tungsten etching and SiO2 etching with the tungsten hardmask.
Scientific Paper on Nano-channel Device Fabrication Using Quartz Plasma Etching from Nagoya University Team
Identifying DNA methylation in a nanochannel
Xiaoyin Suna,b, Takao Yasuia,b,c, Takeshi Yanagidad,e, Noritada Kajia,b, Sakon Rahonga,b, Masaki Kanaid, Kazuki Nagashimad, Tomoji Kawaie and Yoshinobu Babaa,b,f
a Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya, Japan;
b ImPAC T Research Center for Advanced Nanobiodevices, Nagoya University, Nagoya, Japan;
c Japan Science and Technology Agency (JST), PRESTO, Saitama, Japan;
d Institute of Materials Chemistry and Engineering, Kyushu University, Fukuoka, Japan;
e Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan;
f Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Takamatsu, Japan
Science and Technology of Advanced Materials (2016) VOL . 17, NO . 1, 644–649
A new method to analyze DNA methylation was proposed using a nano-channel device in this research. Samco RIE etch tool was used for quartz plasma etching over Cr hard mask to fabricate nano-channel structures. The nano-channel device is effective to detect single DNA molecule.
For more details of our SiO2 (quartz) plasma etching capabilities, please visit the process data page below.
SiO2 Plasma Etching Process (RIE and ICP Etch)
Scientific Paper on Fused Silica Nanofluidic Device Fabrication by National Taiwan University Team
Multiplexed immunosensing and kinetics monitoring in nanofluidic devices with highly enhanced target capture efficiency
Yii-Lih Lin1,2,3, Yen-Jun Huang3,4, Pattamon Teerapanich5,6, Thierry Leïchlé5,6 and Chia-Fu Chou2,3
1 Department of Chemistry, National Taiwan University, Taipei, Taiwan
2 Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica and National Taiwan University, Taipei, Taiwan
3 Institute of Physics, Academia Sinica, Taipei, Taiwan
4 Department of Physics, National Taiwan University, Taipei, Taiwan
5 LAAS-CNRS, 7 Avenue du Colonel Roche, F-31077 Toulouse, France
6 Université de Toulouse, F-31077 Toulouse, France
Biomicrofluidics 10, 034114 (2016)
Samco ICP etch system, RIE-10iP was used for nano-slit pattern fabrication by fused quartz plasma etching.
For our process capabilities of SiO2 and quartz plasma etching, please visit the process data page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on Microdisc Fabrication from Tamkang University, Taiwan
Photonic nanojet induced modes generated by a chain of dielectric microdisks
Cheng-Yang Liu, Chun-Ci Li
Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, New Taipei City, Taiwan
Optik – International Journal for Light and Electron Optics (2016) 127, 1, pp 267–27
Samco Reactive Ion Etching (RIE) system was used for dielectric layer etching to fabricate a microdisc device.
Scientific Paper on Coherent Diffraction Imaging from Hokkaido University
Coherent diffraction imaging of non-isolated object with apodized illumination
Krishna P. Khakurel1,2, Takashi Kimura1,2,3, Yasumasa Joti4, Satoshi Matsuyama3,4, Kazuto Yamauchi3,4 and Yoshinori Nishino1,2,3
1Research Institute for Electronic Science, Hokkaido University, Kita 21, Nishi 10, Kita-ku, Sapporo, Hokkaido, 001-0021, Japan
2Graduate School of Information Science, Hokkaido University, Kita 21, Nishi 10, Kita-ku, Sapporo, Hokkaido, 001-0021, Japan
3Japan Science and Technology Agency, CREST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
4Japan Synchrotron Radiation Research Institute/SPring-8, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
5Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan
Optics Express (2015) 23, 22, pp. 28182-28190
SAMCO RIE plasma etcher at Hokkaido University was used for fabrication of coherent diffraction imaging samples.
Scientific Paper on Fabrication of Amorphous Oxide Thin Film Transistors (TFTs) by AIST, Japan
Electrophoretic displays driven by all-oxide thin-film transistor backplanes fabricated using a solution process
Satoshi Inoue, Tue Trong Phan, Tomoko Hori, Hiroaki Koyama and Tatsuya Shimoda
Green Device Research Center, Japan Advanced Institute of Science and Technology, Ishikawa 923-1211, Japan
physica status solidi (a) Volume 212, Issue 10, pages 2133–2140, October 2015
Samco ICP etching system was used for plasma etching of the Ruthenium Oxide (RuO2), Zr-In-Zn-O (ZIZO), Silicon Dioxide (SiO2) and Indium Tin Oxide (ITO) films.
Our process capabilites of SiO2 dry etching can be found in the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on Microfluidics Fabrication from Nagoya University, Osaka University and AIST
Three-dimensional Nanowire Structures for Ultra-Fast Separation of DNA, Protein and RNA Molecules
Sakon Rahong1,2, Takao Yasui2,3, Takeshi Yanagida4, Kazuki Nagashima4, Masaki Kanai4,
Gang Meng4, Yong He4, Fuwei Zhuge4, Noritada Kaji2,3, Tomoji Kawai4 & Yoshinobu Baba1,2,3,5
1 Institute of Innovation for Future Society, Nagoya University, JAPAN.
2 FIRST Research Center for Innovative Nanobiodevices, Nagoya University, JAPAN.
3 Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, JAPAN.
4 The Institute of Scientific and Industrial Research, Osaka University, JAPAN.
5 Health Research Institute, National Institute of Advanced Industrial Science and. Technology (AIST), JAPAN.
Scientific Reports 5, Article number: 10584 (2015) doi:10.1038/srep10584
SAMCO Reactive Ion Etching System RIE-10NR was used for SiO2 plasma etching over Cr mask. This process is used for micro-channel fabrication on microfluidic system which enables ultra-fast separation of biomolecules (DNA, Protein and RNA Molecules).
For our process examples and capabilities of SiO2 plasma etching, please visit the process data page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)
Scientific Paper on MEMS Device Fabrication Using SiO2 Plasma Etching by Kyoto Institute of Technology
Buckling behavior of piezoelectric diaphragms for highly sensitive structures of ultrasonic microsensors controlled through intrinsic stress of PZT films
Yamashita, K.; Arai, K.; Tanaka, H.; Nishiumi, T.; Noda, M.
Graduate School of Science & Technology, Kyoto Institute of Technology, Kyoto, Japan
presented at Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (ISAF/ISIF/PFM), 2015 Joint IEEE International Symposium on the , vol., no., pp.44-47, 24-27 May 2015
SAMCO silicon DRIE system at Kyoto Institute of Technology was used for Silicon Dioxide (SiO2) dry etching.
Our DRIE systems are equipped with SiO2 etch kit for high-speed SiO2 plasma etching. For more details, please visit our product page below.
Silicon Deep Reactive Ion Etching (DRIE) Systems
Also, for our process capabilities of SiO2 plasma etching, please visit the process data page below.
SiO2 Plasma Etching Process Data (RIE or ICP Etch)
Scientific Paper on SU-8 Membrane Fabrication Using SiO2 Dry Etching by AIST, Japan
Performance of SU-8 Membrane Suitable for Deep X-Ray Grayscale Lithography
Harutaka Mekaru
Research Center for Ubiquitous MEMS and Micro Engineering (UMEMSME), National Institute of
Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan
Micromachines 2015, 6, 252-265
Samco open-load Plasma Etching System (RIE etcher) was used for SiO2 dry etching in the device fabrication. The SiO2 layer was successfully removed without breaking the SU-8 membrane.
For our process capabilities of SiO2 dry etching, please visit the page below.
SiO2 Dry Etching Process (RIE or ICP-RIE)