An Extended-gate Type Organic FET Based Biosensor for Detecting Biogenic Amines in Aqueous Solution

Tsuyoshi MINAMI, Tsubasa SATO, Tsukuru MINAMIKI, and Shizuo TOKITO
Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata
University, 4-3-16 Jonan, Yonezawa, Yamagata 992–8510, Japan
Analytical Sciences (2015) 31

An organic field-effect transistor (OFET) was fabricated for detection of biogenic amines in an aqueous solution. In device fabrication, Samco Plasma Cleaner PC-300 was used for oxygen plasma treatment of metal electrodes for surface cleaning.

For more details of our plasma cleaners, please visit the product page below.
Plasma Cleaners

Coherent diffraction imaging of non-isolated object with apodized illumination

Krishna P. Khakurel^1,2, Takashi Kimura^1,2,3, Yasumasa Joti⁴, Satoshi Matsuyama^3,4, Kazuto Yamauchi^3,4 and Yoshinori Nishino^1,2,3
1Research Institute for Electronic Science, Hokkaido University, Kita 21, Nishi 10, Kita-ku, Sapporo, Hokkaido, 001-0021, Japan
²Graduate School of Information Science, Hokkaido University, Kita 21, Nishi 10, Kita-ku, Sapporo, Hokkaido, 001-0021, Japan
³Japan Science and Technology Agency, CREST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
⁴Japan Synchrotron Radiation Research Institute/SPring-8, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan
⁵Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan
Optics Express (2015) 23, 22, pp. 28182-28190

SAMCO RIE plasma etcher at Hokkaido University was used for fabrication of coherent diffraction imaging samples.

Direct-liquid-evaporation chemical vapor deposition of smooth, highly conformal cobalt and cobalt nitride thin films

Jing Yang^a, Kecheng Li^a, Jun Feng^b and Roy G. Gordon^a,b
a School of Engineering, Applied Sciences, Harvard University, Cambridge, MA 02138, USA
^b Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA 02138, USA

SAMCO UV-Ozone cleaner at Harvard University was used to remove organic contaminants from samples.

Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate

Binh Tinh Tran, Hideki Hirayama, Noritoshi Maeda, Masafumi Jo, Shiro Toyoda and Norihiko Kamata
Quantum Optodevice Laboratory, Institute of Physical and Chemical Research (RIKEN), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Sci Rep. (2015) 5 14734.

SiO2 film was deposited on Si substrate, using Samco PECVD system.
Then, Si was etched over SiO2 film, using Samco ICP etcher for microscale patterning.

For more details of our SiO₂ PECVD & Si plasma etching capabilities, please visit the process data pages below.
SiO₂ PECVD Process Data
Silicon Plasma Etching Process Data (RIE or ICP Etch)

Fabrication of artificial graphene in a GaAs quantum heterostructure

Diego Scarabelli, Sheng Wang, Aron Pinczuk, and Shalom J. Wind
Department of Applied Physics and Applied Mathematics, Columbia University, 500 W. 120th St., Mudd 200, MC 4701, New York, New York 10027
Yuliya Y. Kuznetsova
Department of Physics, Columbia University, 538 W. 120th St., 704 Pupin Hall MC 5255, New York, New York 10027
Loren N. Pfeiffer and Ken West
Department of Electrical Engineering, Princeton University, Olden Street, Princeton, New Jersey 08544
Geoff C. Gardner and Michael J. Manfra
Department of Physics and Astronomy, and School of Materials Engineering, and School of Electrical and Computer Engineering, Purdue University, 525 Northwestern Avenue, West Lafayette, Indiana 47907
Vittorio Pellegrini
Graphene Labs, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy and NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy
Journal of Vacuum Science & Technology B 33, 06FG03 (2015); doi: 10.1116/1.4932672

SAMCO ICP Etch System at Princeton University was used for anisotropic plasma etching of GaAs/AlGaAs to fabricate vertical quantum hetero-structures.

For our process capabilities of GaAs dry etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

Calculation and fabrication of two-dimensional complete photonic bandgap structures composed of rutile TiO2 single crystals in air/liquid

Sachiko Matsushita¹, Akihiro Matsutani², Yasushi Morii¹, Daito Kobayashi¹, Kunio Nishioka², Dai Shoji², Mina Sato², Tetsu Tatsuma³, Takumi Sannomiya¹, Toshihiro Isobe¹, Akira Nakajima^1
1 Department of Metallurgy & Ceramics Science, Graduate School of Science & Technology, Tokyo Institute of Technology, 2-12-1-S7-8, Ookayama, Meguro-ku, Tokyo, 152-8552, Japan
² Technical Department, Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, 4259-R2-3 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan
³ Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan
Journal of Materials Science (2016) Volume 51, Issue 2, pp 1066-1073

Titanium Dioxide (TiO₂) photonic crystal structure was fabricated using Samco Reactive Ion Etch (RIE) system using fluorine chemistry. Two-dimensional photonic band gaps of the TiO₂ structure were theoretically and experimentally studied.

Go to Nakajima & Matushita Lab, Tokyo Institute of Technology

Microfluidic chemical processing with on-chip washing by deterministic lateral displacement arrays with separator walls

Yu Chen^1,2, Joseph D’Silva^1,2, Robert H. Austin^1,3 and James C. Sturm^1,2
1 Princeton Institute for Science and Technology of Materials (PRISM), Princeton, New Jersey 08544, USA
² Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
³ Department of Physics, Princeton University, Princeton, New Jersey 08544, USA
BIOMICROFLUIDICS 9, 054105 (2015)

Samco Silicon DRIE System at Princeton University was used for microchannel fabrication.

For our process capabilities of deep silicon etching, please visit the pages below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Trench/Via Hole Etching using Bosch Process

Improved Light Uniformity From Light-Emitting Diodes by Heterogeneous Microlenses and 3-D Printed Mold

Cheng-Han Chiang and Guo-Dung John Su
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2015) 21, NO. 4

SAMCO UV-Ozone cleaner was used for wettability modulation of SU-8 microlens.

Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns

Yongfang Li^1,2, Akihiro Goryu¹, Kunhan Chen², Hiroshi Toshiyoshi² and Hiroyuki Fujita^2
1 Corporate Research & Development Center, Toshiba Corporation, Kawasaki, JAPAN
² The University of Tokyo, Tokyo, JAPAN
Presented at 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Samco open-load RIE system was used for silicon dry etching over oxide to transfer the oxide pattern in new lithography process development.

For our process capabilities of silicon dry etching for device fabrication please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process

Flexible, transparent and robust SERS tapes through a two-step block copolymer self-assembly process

Vignesh Suresh and Fung Ling Yap
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology, and Research (A*STAR), 3, Research Link, Singapore 117602
RSC Adv., 2015, 5, 61671-61677

Samco table-top UV-Ozone cleaner was used for removal of organic contaminants in sample preparation.