Sub-5 nm nanostructures fabricated by atomic layer deposition using a carbon nanotube template

Ju Yeon Woo¹, Hyo Han¹, Ji Weon Kim1, Seung-Mo Lee², Jeong Sook Ha³, Joon Hyung Shim¹ and Chang-Soo Han^1
1 School of Mechanical Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul 136-713, Korea
² Department of Nanomechanics, Nano-Convergence Mechanical Systems Research Division, Korea Institute of Machinery & Materials (KIMM), 156 Gajungbuk-ro, Yuseong-gu, Daejeon 305-343, Korea
³ Department of Chemical & Biological Engineering, Korea University Anam-Dong, Seongbuk-Gu, Seoul 136-713, Korea
Nanotechnology (2016) 27 265301 (7pp)

Samco RIE system was used for removal of single-walled carbon nanotubes (CNT) in an oxygen plasma.

Chlorine-based inductively coupled plasma etching of GaAs wafer using tripodal paraffinic triptycene as an etching resist mask

Akihiro Matsutani¹, Fumitaka Ishiwari², Yoshiaki Shoji², Takashi Kajitani², Takuya Uehara³, Masaru Nakagawa³, and Takanori Fukushima^2
1 Division of Microprocessing Technology Platform, Technical Department, Tokyo Institute of Technology, Yokohama 226-8503, Japan
² Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 226-8503, Japan
³ IMRAM, Tohoku University, Sendai 980-8577, Japan
Japanese Journal of Applied Physics (2016) Volume 55, Number 6S1

Samco ICP etch system was used for GaAs plasma etching over tripodal paraffinic triptycene (TripC₁₂) mask.
Based on chlorine gas plasma chemistry, vertical and smooth GaAs profile was achieved.

For our process capabilities of GaAs plasma etching, please visit the process data page below.
GaAs Dry Etching Process (ICP-RIE)

Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT

Khafe, Adie Bin Mohd¹; Watanabe, Hiraku¹; Yamauchi, Hiroshi¹; Kuniyoshi, Shigekazu¹; Iizuka, Masaaki²; Sakai, Masatoshi¹; Kudo, Kazuhiro^1
1 Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba, 263-8522, Japan
² Faculty of Education, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba, 263-8522, Japan
Journal of Nanoscience and Nanotechnology, Volume 16, Number 4, April 2016, pp. 3168-3175(8)

Samco UV-Ozone cleaner, UV-1 was used for ultraviolet/ozone (UV-O₃) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET) to improve drain current and mobility of the ZnO-based device. They found that UV-Ozone treatment eliminated carbon impurities in ZnO thin film and improved the performance of ZnO-FET.

Surface fluorination of rutile-TiO₂ thin films deposited by reactive sputtering for accelerating response of optically driven capillary effect

Taizo Kobayashi¹, Hironobu Maeda², and Satoshi Konishi^3
1 Ritsumeikan-Global Innovation Research Organization, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
² Graduate School of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
³ Department of Mechanical Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
Japanese Journal of Applied Physics 55, 06GP03 (2016)

TiO₂ thin films with the rutile phase were fluorinated using Samco RIE system to enhance the photoresponsivity.

Optically and electrically excited emissions from organic semiconducting oligomer crystals

Shu Hotta
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Sakyo-ku, Kyoto, Japan
Polymer International 2016

Samco ICP etch system was used for PDMS mold fabrication to etch away UV-curable photoresist.

Athermal Hybrid Silicon/Polymer Ring Resonator Electro-optic Modulator

Feng Qiu¹, Andrew M. Spring¹, Hiroki Miura², Daisuke Maeda³, Masa-aki Ozawa³, Keisuke Odoi³, and Shiyoshi Yokoyama^{1, 2
1} Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
² Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka 816-8580, Japan
³ Nissan Chemical Industries, LTD, 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507, Japan
ACS Photonics
DOI: 10.1021/acsphotonics.5b00695

Silicon plasma etching was performed using Samco silicon DRIE system to fabricate a hybrid silicon/polymer ring resonator electro-optic (EO) modulator.
For our process examples of silicon plasma etching, please visit process data page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV

Sub-70 nm resolution patterning of high etch-resistant epoxy novolac resins using gas permeable templates in ultraviolet nanoimprint lithography

Satoshi Takei and Makoto Hanabata
Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
Appl. Phys. Express (2016) 9 056501

Samco tabletop Reactive Ion Etching (RIE) System was used for evaluation of resist materials on plasma etch selectivity. Resin etching process was performed using fluorine chemistry.

Unexpected Effects of the Rate of Deposition on the Mode of Growth and Morphology of Thin Films of Tetracene Grown on SiO₂

R. K. Nahm and J. R. Engstrom
School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853, United States
J. Phys. Chem. C, 2016, 120 (13), pp 7183–7191
DOI: 10.1021/acs.jpcc.6b00963

Samco UV-Ozone cleaner at Cornell University was used for sample preparation before tetracene growth.

Top-Down Nanofabrication and Characterization of 20 nm Silicon Nanowires for Biosensing Applications

M. Nuzaihan M. N ¹, U. Hashim^1,2, M. K. Md Arshad^1,2, A. Rahim Ruslinda¹, S.F.A. Rahman³, M. F. M. Fathil¹, Mohd. H. Ismail^2
1 Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000 Kangar, Perlis, Malaysia,
² School of Microelectronic Engineering, Universiti Malaysia Perlis (UniMAP), 02600 Pauh, Perlis, Malaysia,
³ Chemistry Department, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Malaysia
PLoS ONE 11(3): e0152318. doi:10.1371/journal.pone.0152318

Samco ICP etch system at Universiti Malaysia Perlis was used for anisotropic etching of silicon for silicon nanowires fabrication.
For our process examples of silicon dry etching, please visit the process data page below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)

Dielectric Coating Thermal Stabilization During GaAs-Based Laser Fabrication for Improved Device Yield

MICHAEL K. CONNORS^1,3, JAMAL E. MILLSAPP² and GEORGE W. TURNER^1
1 Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02
420, USA.
² Toho Technology Inc., Chicago, IL 60625, USA.
Journal of Electronic Materials (2016) pp 1-7

A 300-nm thick SiO₂ film was deposited using Samco Cathode PECVD system, PD-200STP to insulate the exposed ridge sidewalls.

For more details on Samco’s low-temperature PECVD technologies and process capabilities, please visit our featured process solution page below.
Low-temperature PECVD for SiO₂ & SiN_x Deposition