Creation of atomically flat Si{111}7 × 7 side-surfaces on a three-dimensionally-architected Si(110) substrate

Azusa N. Hattori^a, Ken Hattori^b, Shohei Takemoto^b, Hiroshi Daimon^b and Hidekazu Tanaka^a
a Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihoga-oka, Ibaraki, Osaka 567-0047, Japan
^b Graduate School of Materials Science, Nara Institute of Science and Technology, Takayama 8916-5, Ikoma, Nara 630-0192, Japan
Surface Science (2016) 644, 86–90

Samco silicon DRIE System was used for deep silicon etching to fabricate three-dimensional (3D) nanostructures.

For more details of our deep silicon etching capabilities, please visit the process data pages below.
Deep Silicon Trench/Via Hole Etching using Bosch Process
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV

Electrostatically assisted fabrication of silver–dielectric core/shell nanoparticles thin film capacitor with uniform metal nanoparticle distribution and controlled spacing

Xue Li^{a, b}, Olivia Niitsoo^a and Alexander Couzis^a
a Department of Chemical Engineering, The City College of New York, NY 10031, United States
^b Department of Chemical and Biomolecular Engineering, Lehigh University, Bethelehem, PA 18015, United States
Journal of Colloid and Interface Science (2016) 465, 333–341

Samco UV-Ozone cleaner at the City College of New York was used for UV-Ozone surface cleaning of ITO substrates before nanoparticle deposition.