PECVD – Plasma Enhanced Chamical Vapor Deposition
PECVD is a deposition technology to deposit thin films using plasma technology. Compared to other deposition technologies such as PVD and Thermal CVD which are widely used for semiconductor device fabrication, PECVD can deposit thin films with high uniformity over the wafers at relatively low temperature (less than 350°C). Furthermore, this plasma deposition technology offers excellent material property control (refractive index, hardness and more) of thin films such as SiO2, SiNx, a-Si, SiON and DLC.
Product Lineup of Anode PECVD Systems
Samco offers PECVD systems of Anode PECVD and Cathode PECVD. We offer proper systems depending on customers’ process requirements.
Open-load Anode PECVD Systems
The SAMCO PD-220NR, PD-3800, PD-4800 and PD-5400 are open-load Plasma Enhanced Chemical Vapor Deposition (PECVD) systems. They are capable of depositing a wide range of thin films such as SiO2, Si3N4, SiOxNy, a-Si:H and DLC (Diamond-like Carbon). The systems are fully automated, and include a built in fume hood over the process chamber to increase operator safety. The PD-220NR, PD-3800, PD-4800 and PD-5400 are designed to meet the demanding process requirements for both research, and production customers.
Load-lock Anode PECVD Systems
The PD-220NL and PD-3800L are load lock systems that have a deposition chamber, and a separate loading chamber. The addition of a loadlock allows the chamber to stay under vacuum. The controlled environment improves process repeatability. Load lock systems are also typically required when using dopant gases.
The systems include all the features of the open-load platform. The PD-220NL adds a surface treated protective shield that is raised during substrate loading. The shield protects the condition of the slit valve seal, reduces cleaning intervals, and also improves uniformity.
Cassette Anode PECVD Systems
Vacuum Cassette systems are typically used when processes require a controlled environment. In this configuration the Deposition chamber is coupled to a transfer chamber with vacuum robot, and an additional Loading chamber includes a vacuum cassette elevator.
The PD-220LC is a 200mm single wafer (or 220mm batch) cassette based PECVD system, and includes all the features of the Load lock platform. This plasma CVD system is ideal for high volume device manufacturing and achieves an impressive monthly throughput of ten thousand 2″ wafers.
Excellent step coverage of SiNx
Step coverage of liquid-source based SiNx on Al lines
|Open-load Anode PECVD Systems||Load-lock Anode PECVD Systems||Cassette Anode PECVD Systems|
|Loading||Open-load||Load-lock||Vacuum Cassette Chamber|
|Wafer Placement||Manual||Linear Robot||Vacuum Robot|
|Sample Size||220/360/428/540 mm||220/350 mm||220 mm|
|Chuck Temperature Range||20~400°C|
|Gases||Up to 8 gas lines, liquid delivery option|
|Base Vacuum||Mechanical Booster + Rotary Pump||Base Pressure Turbo Pump, Mechanical Booster + Rotary Pump|
|RF Power||300 W, Low Frequency (LF) Option|
|System control||Easy-to-use Touch-panel GUI|
|Endpoint Option||Optical End-point Detection|
|System Features||Single Wafer or Batch Processing||Single Wafer or Batch Processing
Advanced Inner Wall
Robot and Cassette Chamber
State-of-the-art robot wafer handling system and cassette will improve process throughput.
Protective shield inside the reaction chamber will control disposal of the plasma discharge and improve deposition uniformity. Furthermore, it prevents film deposition on sections of the chamber that are not easily cleaned with plasma cleaning processes. Also, it prevents deterioration of gate valve O-rings during the cleaning process.
Large Chamber Systems
Capable of processing up to 300/450 mm or batch processing of small wafers.
Superior Process Control
Controllable film properties will meet various demands in device fabrication.
Excellent Process Repeatability
Repeatable process will improve quality and reliability of devices.