Open-load Cathode PECVD Systems
The Samco PD-100ST and PD-270STPM are open-load Cathode driven Plasma Enhanced Chemical Vapor Deposition (PECVD) systems. They utilize liquid delivery sources such as TEOS to deposit films at high speed using a low temperature process. The strong sheath electrical field surrounding the cathode-coupled sample stage generates a high level of ion energy, which enables the deposition of SiO2 films with low internal stress, and extremely thick films up to 50 µm.
These systems are fully automated, and include a built in fume hood over the process chamber to increase operator safety. The PD-100ST and PD-270STPM are designed to meet the demanding process requirements for both research and production customers.
Load-lock Cathode PECVD Systems
The PD-270STL and PD-330STL are advanced load lock systems that have a deposition chamber, a vacuum transfer chamber, and an atmospheric loading room that includes a built in fume hood. The addition of a vacuum transfer chamber allows the deposition chamber to stay under vacuum. The controlled environment improves process repeatability.
The systems include all the features of the open-load platform. The PD-220NL adds a surface treated protective shield that is raised during substrate loading. The shield protects the condition of the slit valve seal, reduces cleaning intervals, and also improves uniformity.
Cassette Cathode PECVD Systems
Vacuum Cassette systems are typically used when processes require a controlled environment. In this configuration the Deposition chamber is coupled to a transfer chamber with vacuum robot, and an additional Loading chamber includes a vacuum cassette elevator.
The PD-270STLC and PD-330STLC are cassette based PECVD system, and include all the features of the Load lock platform. These systems are ideal for high volume manufacturing in single wafer or batch cassette configurations.
Samco PECVD systems provide repeatable SiNx and SiO2 deposition processes using SiH4 or liquid source.
For more detail on our Cathode PECVD technology and our capabilities, Please check Featured Solutions Page and Process Data Page.
Conformal TEOS-SiO2 coating of Cu lines without delamination
Photo courtesy of Research Center for Three-Dimensional Semiconductors
25 µm thick SiO2 over-clad formation
300 nm thick SiH4-SiO2 passivation deposition on Al lines
|Open-load Cathode PECVD Systems||Load-lock Cathode PECVD Systems||Cassette Cathode PECVD Systems|
|Loading||Open-load||Load-lock||Vacuum Cassette Chamber|
|Wafer Placement||Manual||Linear Robot||Vacuum Robot|
|Sample Size||100/200 mm||200/300 mm|
|Chuck Temperature Range||20~400°C|
|Gases||4 gas lines + liquid delivery module|
|Base Vacuum||Base Pressure Turbo Pump, Mechanical Booster + Rotary Pump|
|RF Power||300 W/1 KW||1 KW/1.5 KW|
|Base Vacuum||Mechanical Booster + Rotary Pump||Base Pressure Turbo Pump, Mechanical Booster + Rotary Pump|
|System control||Easy-to-use Touch-panel GUI|
|Endpoint Option||Optical End-point Detection|
|System Features||Single Wafer or Batch Processing||Single Wafer or Batch Processing
Advanced Inner Wall
Robot and Cassette Chamber
State-of-the-art robot wafer handling system and cassette will improve process throughput.
Protective shield inside the reaction chamber will control disposal of the plasma discharge and improve deposition uniformity. Furthermore, it prevents film deposition on sections of the chamber that are not easily cleaned with plasma cleaning processes. Also, it prevents deterioration of gate valve O-rings during the cleaning process.
Large Chamber Systems
Capable of processing up to 300/450 mm or batch processing of small wafers.
Optional FOUP unit will enhance throughput.
Self Bias Voltage vs. Film Hardness
Film properties including film hardness, refractive index, wet etch rate and etc. can be controlled with recipe adjustment.
TEOS-SiO2 film thickness in consecutive 10 batch processes shows variation below ± 1.5%.