SiC CVD Systems

SAMCO Inc. > Deposition Systems > SiC CVD Systems

SiC CVD Systems

The EPI 1000-C is a horizontal, hot-wall Chemical Vapor Deposition (CVD) reactor that has been designed for the epitaxial growth of silicon carbide (SiC) up to 150 mm. The hot-wall reactor has very small thermal gradient inside the reactor chamber and this is the secret to produce epitaxial layers with exceptional crystal quality. The growth chamber is made of coated graphite, is inductively heated with a coil outside the quartz tube.

The complete gas mixing system is integrated in the same cabinet. It delivers the precise flow of each gas required for the process. The gas mixing system is fully flexible, and can be updated at a later stage to meet new requirements.

The process pressure is usually around 100 mbar. Base pressure is achieved using a turbo-molecular pump, and dry process pump.

The reactor includes one growth chamber and the wafer is manually loaded and unloaded with a fork sliding on a horizontal guide rail. As standard the maximum temperature is 1700°C with options to extend the temperature range.

With a small footprint, and low running costs, the EPI 1000-C reactor is intended for both research, and small scale production.

SiC CVD System
EPI 1000-C
Loading Glove Box
Wafer Placement Manual
Sample Size 150 mm
Substrate Temperature 20~1700°C
Substrate Measurement Pyrometer
Heater (RF) 50 kW
Vacuum System Turbo Pump with Rotary Backing Pump
Gas Lines Fully Configurable
System Control Manual, Auto, Service
Applications Silicon Carbide and WBG

  • High power electronics for
    – the smart grid
    – power reconditioners
    – electrical vehicles
  • Efficient LEDs
  • Low losses PV inverters

Graphene

  • Next generation of ultra fast electronics
  • Next generation of sensors
Undoped
Growth Rate ≥ 7 μm/h

≥ 25 μm/h (HCl assisted)

Thickness Uniformity ≤ 2%
Background Doping Level ≤ 1 x 1015 cm-3
N2 Doped
Doping Level 1 x 1016 cm-3 ± 20%
Doping Uniformity (on wafer) ≤ 10%
Al Doped
Doping Level 5 x 1018 cm-3 ± 20%
Doping Uniformity (on wafer) ≤ 10%
Run to run
Mean Thickness ≤ 10%
Mean Doping Uniformity ≤ 15%
Defects
Doping Level 1 x 1016 cm-3 ± 20%
Defect Density (50 μm) ≤ 1/cm²
The specified data is guaranteed only when substrates are identical.
The defects should be classified into two groups:
  1. Downfalls/particles defect shall have diameter >10 µm to be counted
  2. Comets/triangular defects shall be counted for diameter > 50 µm2 (square micrometer)

System Features

Glove Box

Glove box of SiC CVD system

 A glove box system is economic solution for research and development under clean atmospheres.

Efficient pumping

Efficient pumping

Turbo and dry backing pump to create high vacuum

Graphite Cell

Graphite cell of SiC CVD system

50 kW resistive heater

Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Any questions? Contact us for more detail.
Contact SAMCO for more product information
Contact us for more detail.
Top