SiC CVD Systems
The EPI 1000-C is a horizontal, hot-wall Chemical Vapor Deposition (CVD) reactor that has been designed for the epitaxial growth of silicon carbide (SiC) up to 150 mm. The hot-wall reactor has very small thermal gradient inside the reactor chamber and this is the secret to produce epitaxial layers with exceptional crystal quality. The growth chamber is made of coated graphite, is inductively heated with a coil outside the quartz tube.
The complete gas mixing system is integrated in the same cabinet. It delivers the precise flow of each gas required for the process. The gas mixing system is fully flexible, and can be updated at a later stage to meet new requirements.
The process pressure is usually around 100 mbar. Base pressure is achieved using a turbo-molecular pump, and dry process pump.
The reactor includes one growth chamber and the wafer is manually loaded and unloaded with a fork sliding on a horizontal guide rail. As standard the maximum temperature is 1700°C with options to extend the temperature range.
With a small footprint, and low running costs, the EPI 1000-C reactor is intended for both research, and small scale production.
| EPI 1000-C | |
| Loading | Glove Box |
| Wafer Placement | Manual |
| Sample Size | 150 mm |
| Substrate Temperature | 20~1700°C |
| Substrate Measurement | Pyrometer |
| Heater (RF) | 50 kW |
| Vacuum System | Turbo Pump with Rotary Backing Pump |
| Gas Lines | Fully Configurable |
| System Control | Manual, Auto, Service |
| Applications | Silicon Carbide and WBG
Graphene
|
| Undoped | |
| Growth Rate | ≥ 7 μm/h
≥ 25 μm/h (HCl assisted) |
| Thickness Uniformity | ≤ 2% |
| Background Doping Level | ≤ 1 x 1015 cm-3 |
| N2 Doped | |
| Doping Level | 1 x 1016 cm-3 ± 20% |
| Doping Uniformity (on wafer) | ≤ 10% |
| Al Doped | |
| Doping Level | 5 x 1018 cm-3 ± 20% |
| Doping Uniformity (on wafer) | ≤ 10% |
| Run to run | |
| Mean Thickness | ≤ 10% |
| Mean Doping Uniformity | ≤ 15% |
| Defects | |
| Doping Level | 1 x 1016 cm-3 ± 20% |
| Defect Density (50 μm) | ≤ 1/cm² |
| The specified data is guaranteed only when substrates are identical. The defects should be classified into two groups: |
|
- Downfalls/particles defect shall have diameter >10 µm to be counted
- Comets/triangular defects shall be counted for diameter > 50 µm2 (square micrometer)
System Features
Glove Box
A glove box system is economic solution for research and development under clean atmospheres.
Efficient pumping
Turbo and dry backing pump to create high vacuum
Graphite Cell
50 kW resistive heater
