Scientific Paper on AlGaN/GaN HEMT from Tokyo Institute of Technology

May 1, 2015 Samco 2015 Customer, Compound Semiconductor Etching, GaN Etch, Power Devices, Samco Customer Publication

Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique

Ryota Yamanaka1, Toru Kanazawa1, Eiji Yagyu2 and Yasuyuki Miyamoto1
1 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
2 Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
Japanese Journal of Applied Physics (2015) 54, 06FG04

SAMCO Reactive Ion Etching System, RIE-10NR was used for fabrication of recessed gate structure of normally-off AlGaN/GaN high-electron-mobility transistor (HEMT).
Undercut issue in recess etching was resolved with the RIE process.

GaN Periodic Table

For our process solutions of GaN based power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

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