Scientific Paper on InGaAs Nanowire Fabrication Using InGaAs Plasma Etching from MIT

June 10, 2014 Samco 2014 Customer, Compound Semi Etch, InGaAs Etch, SAMCO Customer Publication

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Xin Zhao and Jesús A. del Alamo
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
IEEE ELECTRON DEVICE LETTERS (2014) 35, 5

Samco ICP etch system was used for fabrication of InGaAs nanowires. The nanowires showed vertical and smooth sidewalls by optimization of the etch recipe.
Massachusetts Institute of Technology (MIT) is one of the proprietary customers of Samco plasma etching systems. They use our process equipment for plasma etching of III-V materials such as GaN, GaAs and InGaAs in various device projects.

InGaAs Periodic Table

For our process capabilities of GaAs plasma etching, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)

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