Transition from a-Si:H to Si₃N₄ in thin films deposited by PECVD technology from silane diluted with nitrogen

P. Šutta¹, P. Calta¹, J. Müllerová², M. Netrvalová¹, R. Medlín¹, J. Savková¹ and V. Vavruňková^1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
² Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)

Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si₃N₄ multi-layered films.

For more details of our Si₃N₄ PECVD process capabilities, please visit the page below.
Si₃N₄ PECVD Process

Packaging and design of a heterogeneous dual laser chip for a widely tunable spectrally pure optical RF source

David W. Grund Jr., Garrett J. Schneider, Janusz Murakowski, and Dennis W. Prather
Electrical and Computer Engineering, University of Delaware, Newark, Delaware, USA
Optics Express (2014) 22, 17, pp. 19838-19849

Samco ICP Etch System was used for silicon fine etching.
Then, Samco PECVD System was used for SiO₂ layer deposition to isolate a metal heater from the etched silicon layer.

For details of SiO₂ PECVD process capabilities, please visit the page below.
SiO₂ PECVD Process

DNA combing on low-pressure oxygen plasma modified polysilsesquioxane substrates for single-molecule studies

K. K. Sriram^1,2,3 Chun-Ling Chang³ U. Rajesh Kumar^1,4,5 and Chia-Fu Chou^3,6,7
1 Nano Science and Technology Program, Taiwan International Graduate Program, Academia Sinica, Taipei 11529, Taiwan
² Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
³ Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
⁴ Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
⁵ Department of Chemistry, National Taiwan University, Taipei 10617, Taiwan
⁶ Genomics Research Center, Academia Sinica, Taipei 11529, Taiwan
⁷ Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
Biomicrofluidics (2014) 8, 052102

SAMCO ICP Etch System was used for microchannel fabrication on fused silica glass substrates.

For more details of our glass dry etch technologies (SiO2, fused silica and quartz), please visit the page below.
SiO₂ Dry Etching Process (RIE or ICP-RIE)

Nanofabrication of air-spaced field-plate gates with ultra-short footprint

Jinhai Shao^a, Jianpeng Liu^a, Junjie Li^a, Sichao Zhang^a, Bing-Rui Lu^a, W. Lu^b and Yifang Chen^a
a State Key Lab of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
^b Department of Electrical and Computer Engineering, Ohio State University, Columbus, OH 43210, USA
Microelectronic Engineering (2014) 143, 1, 11-14

Samco RIE System at Fudan University was used for SiNx plasma etching to fabricate short foot-print field-plate gates for GaN based high electron mobility transistors (HEMTs).

For our process solutions of GaN power device fabrication, please visit the page below.
AlGaN/GaN Etch for GaN Power Device Fabrication

Fabrication and Characterization of a Novel Nanoscale Thermal Anemometry Probe

Margit Vallikivi and Alexander J. Smits
Department of Mechanical and Aerospace Engineering, Princeton University, Princeton, NJ 08544 USA
Journal of Microelectromechanical Systems (2014) 23 , 4

Samco Silicon DRIE System at Princeton University was used for slope formation from a silicon substrate to fabricate a MEMS-based nanoscale thermal anemometry probe.

For more details of our deep silicon etching capabilities using the Bosch Process, please visit the page below.
Si DRIE (Deep Reactive Ion Etching) for MEMS and TSV
Deep Silicon Etching Process Data Using the Bosch Process

Process dependency on threshold voltage of GaN MOSFET on AlGaN/GaN heterostructure

Qingpeng Wang^{a, b}, Ying ^{, b}, Takahiro Miyashita^c, Shin-ichi Motoyama^c, Liuan Li^b, Dejun Wang^a, Yasuo Ohno^b and Jin-Ping Ao^b
a School of Electronic Science and Technology, Dalian University of Technology, 2 Linggong Road, Ganjingzi District, Dalian 116024, China
^b Institute of Technology and Science, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506, Japan
^c Research and Development Department, SAMCO Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
Solid-State Electronics (2014) 99, Pages 59–64

Samco PECVD system was used for SiO2 insulation film deposition.
This paper is collaboration work of Dalian University of Technology, The University of Tokushima and Samco.

For more details of our SiO₂ PECVD technologies, please visit the page below.
SiO₂ PECVD Process

Angled etching of (001) rutile Nb–TiO₂ substrate using SF₆-based capacitively coupled plasma reactive ion etching

Akihiro Matsutani¹, Kunio Nishioka¹, Mina Sato¹, Dai Shoji¹, Daito Kobayashi², Toshihiro Isobe², Akira Nakajima², Tetsu Tatsuma³ and Sachiko Matsushita^2
1 Semiconductor and MEMS Processing Center, Tokyo Institute of Technology, Yokohama 226-8503, Japan
² Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, Meguro, Tokyo 152-8550, Japan
³ Institute of Industrial Science, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
Jpn. J. Appl. Phys. (2014) 53 06JF02

Rutile Nb–TiO₂ substrates were etched using Samco Reactive Ion Etch (RIE) System. Vertical sidewalls and a smooth surface were successfully achieved.

Investigation of the transition phases from amorphous silicon-based multilayers to silicon nanostructures by in situ X-ray diffraction

Solomon Agbo, Pavel Calta, Pavol Sutta, Veronika Vavrunkova, Marie Netrvalova and Lucie Prusakova
New Technologies Research Centre, University of West Bohemia, Pilsen, Czech Republic
physica status solidi (a) (2014) 211, 7, 1512–1518

Samco Plasma CVD System was used for deposition of multilayers comprising alternating layers of a-Si:H and SiO₂.

For more details of our SiO₂ Plasma CVD technologies, please visit the process data page below.
SiO₂ Plasma CVD Process Data

Heterogeneously integrated laser-induced fluorescence detection devices: Integration of an excitation source

Toshihiro Kamei, Keiko Sumitomo, Sachiko Ito, Ryo Takigawa, Noriyuki Tsujimura, Hisayuki Kato, Takeshi Kobayashi and Ryutaro Maeda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8564, Japan
Japanese Journal of Applied Physics (2014) 53, 06JL02

P-doped, undoped and B-doped a-Si:H film deposition were performed using SAMCO PECVD System for microfluidic device fabrication.

Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs

Xin Zhao and Jesús A. del Alamo
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139 USA
IEEE ELECTRON DEVICE LETTERS (2014) 35, 5

Samco ICP etch system was used for fabrication of InGaAs nanowires. The nanowires showed vertical and smooth sidewalls by optimization of the etch recipe.
Massachusetts Institute of Technology (MIT) is one of the proprietary customers of Samco plasma etching systems. They use our process equipment for plasma etching of III-V materials such as GaN, GaAs and InGaAs in various device projects.

For our process capabilities of GaAs plasma etching, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)