Fabrication of SiN_x Thin Film of Micro Dielectric Barrier Discharge Reactor for Maskless Nanoscale Etching

Qiang Li¹, Jie Liu¹, Yichuan Dai¹, Wushu Xiang¹, Man Zhang¹, Hai Wang² and Li Wen^1
1 Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei 230027, China
² School of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000, China

Micro dielectric barrier discharge (MDBD) devices have some potential interesting applications such as surface modification. Silicon Nitride (SiN_x) film can be used as a dielectric barrier layer material in MDBD devices. However, there are challenges of crack and wrinkle formation due to mechanical stress of SiN_x film in device fabrication. Samco plasma CVD system was used for SiN_x film deposition. With optimization of deposition process recipe, compressive stress of SiN_x film was mitigated to suppress crack formation.

For more details of our SiN_x film deposition capabilities, please visit the process data page below.
SiN_x PECVD Process

Planar Indium Tin Oxide Heater for Improved Thermal Distribution for Metal Oxide Micromachined Gas Sensors

M. Cihan Çakır^1,2 ,Deniz Çalışkan¹, Bayram Bütün¹ and Ekmel Özbay^1,3
1 Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
² Department of Nanotechnology and Nanomedicine, Hacettepe University, Ankara 06800, Turkey
³ Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara 06800, Turkey

Samco PECVD system at Bilkent University was used for Si₃N₄ film deposition to form an etch stop layer in Si wet etching. Furthermore, Samco ICP-RIE plasma etcher at Bilkent University was used for plasma etching of Si₃N₄ against Si etch mask for ITO gas sensor fabrication.

For more information on our Si₃N₄ PECVD process capabilities, please visit the process data page below.
Si₃N₄ PECVD Process Data

For more details of Samco PECVD systems and ICP-RIE systems, please visit product pages below.
Anode PECVD Systems for SiO₂, Si₃N₄, a-Si, SiON, SiCN & DLC Deposition
Cathode PECVD Systems for High-speed SiO₂ and Si₃N₄ Film Deposition
ICP-RIE Plasma Etcher for Si, SiO₂, III-V & Metal Etching

Athermal and High-Q Hybrid TiO₂–Si₃N₄ Ring Resonator via an Etching-Free Fabrication Technique

Feng Qiu, Andrew M. Spring, and Shiyoshi Yokoyama*
Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga-city, Fukuoka, 816-8580, Japan
ACS Photonics (2015) 2, 3 pp 405–409

Samco PECVD system was used for Si3N4 deposition to fabricate a ring resonator.

For more details of our SiN_x PECVD process capabilities, please visit the page below.
SiN_x PECVD Process

Transition from a-Si:H to Si₃N₄ in thin films deposited by PECVD technology from silane diluted with nitrogen

P. Šutta¹, P. Calta¹, J. Müllerová², M. Netrvalová¹, R. Medlín¹, J. Savková¹ and V. Vavruňková^1
1 New Technologies – Research Centre, University of West Bohemia, Univerzitní 8, 306 14 Pilsen, Czech Republic
² Institute of A. Stodola, Faculty of Electrical Engineering, University of Žilina, Kpt. J. Nálepku 1390, 031 01 Lipt. Mikuláš, Slovak Republic
Presented at 2014 10th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)

Samco PECVD System was used for the deposition of a-SiN:H thin films and a-Si:H/a-Si₃N₄ multi-layered films.

For more details of our Si₃N₄ PECVD process capabilities, please visit the page below.
Si₃N₄ PECVD Process