1. GaN/AlGaN/InGaN Epi Growth
2. Ridge Formation with End Point Monitoring
Samco ICP etch systems are equipped with optional optical or interferometric endpoint monitor. The endpoint monitor enables precise etch depth control, combined with specially developed low-speed etch process.
4. Passivation Film Deposition by PECVD
SiH4 Flow Rate v.s. Film Stress
SiH4 Flow Rate v.s. Uniformity/Deposition Rate
SiO2 film properties are highly controllable with experienced process recipes.
5. Exposure of p-Contact Layer (SiO2 Etching)
Samco’s atmospheric cassette RIE etchers equipped with double cassettes and multi-joint robot for wafer transfer improve throughput of SiO2 etching for contact hole formation. The systems show stable SiO2 etch uniformity around ± 1.5% over 25 x ø4”wafers.
7. p-Electrode Formation by Sputtering
Creating p-electrode by sputtering Palladium (Pd) and Platinum (Pt).
8. Wafer Polishing
Polish away GaN substrate from the wafer backside to be 100 µm thick.
9. n-Electrode Formation by Sputtering
Sputter Titanium (Ti), Platinum (Pt), and Gold (Au) subsequently to create n-electrode.
10. Wafer Dicing
Samco provides plasma scribing processes for compound semiconductor materials. Fragile and small samples can be handled using a wafer carrier and a reliable transfer robot.
11. Reflective Layer Formation (SiO2 or SiNx deposition by PECVD)
One of unique system features of Samco anode PECVD systems is Advanced Innerwall. Protective shield inside the reaction chamber will control disposal of the plasma discharge and improve deposition uniformity.