1. Deep Silicon Etching by the Bosch Process
Insulating layers of SOI substrates are widely used for a silicon etch stop in MEMS device fabrication. SAMCO has developed a unique notch-free SOI etching process that maintains the etch selectivity by using superimposed Radio Frequency (RF) power. Furthermore, The deep silicon etch processes are performed without tilt across ø6″ or 8”wafers.
3. SiO2 Sacrificial Layer Removal