Scientific Paper on GaAs Plasma Etching from MIT

March 12, 2014 Samco 2014 Customer, Compound Semiconductor Etching, GaAs Etch, Samco Customer Publication

Inductively coupled plasma reactive ion etching of GaAs wafer pieces with enhanced device yield

Michael K. Connors, Leo J. Missaggia, William S. Spencer and George W. Turner
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, Massachusetts 02420
J. Vac. Sci. Technol. B 32, 021207 (2014)

SAMCO ICP Etching System, RIE-200iP was used for process investigation of GaAs plasma etching.

Periodic Table GaAs

For more details of our GaAs plasma etching technologies, please visit the page below.
GaAs Dry Etching Process (ICP-RIE)