Scientific paper on PECVD SiO2 insulation deposition by AIST
Run-to-Run Yield Evaluation of Improved Nb 9-layer
Advanced Process using Single Flux Quantum Shift Register
Chip with 68,990 Josephson Junctions
Shuichi Nagasawa and Mutsuo Hidaka
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1
Umezono, Tsukuba 305-8568, Japan
IOP Conf. Series: Journal of Physics: Conf. Series 871 (2017) 012065
Sputter SiO2 deposition process has a challenge in reproducibility in device fabrication.
In this paper, as an alternative of the sputter deposition method, PECVD deposition method was developed in combination with Ar ion milling. Samco PECVD system, PD-270STL at AIST was used for SiO2 insulation layer deposition. With effective chamber conditioning, SiO2 insulation with less particles was achieved with an excellent run-to-run reproducibility.
This research was presented at 29th International Symposium on Superconductivity.
For more details of our SiO2 PECVD process capabilities,
please visit the process data page below.
SiO2 PECVD Data