Open load system for ALD
The AD-10P is an open load Atomic Layer Deposition (ALD) system that enables atomic level control over film thickness. It utilizes both thermal ALD and plasma enhanced ALD to deposit a diverse range of materials, including oxide, nitride, and conductive films. The system achieves exceptional control over film thickness, superior in-plane wafer uniformity, and excellent step coverage by alternately introducing organometallic precursors and reactants into the reaction chamber, ensuring deposition occurs solely through surface reactions. Pulsed precursor delivery, with durations of several hundred milliseconds or less, minimizes precursors loss and enhances deposition efficiency.
Key Features & Benefits
- Capable of handling up to one ⌀8 inch wafer or simultaneously process three ⌀4 inch wafers with carrier tray.
- Advanced Reaction Chamber Design:
Chamber design minimizes particle generation, allowing for pin-hole free film deposition. - Enhanced Efficiency:
Pulses of tens of milliseconds reduce precursor loss and improve deposition efficiency. - Robust Safety Features:
Equipped with various interlocks and anomaly detection functions for safe operation. - Heated chamber wall to prevent deposition of reaction byproducts to allow for uniform substrate temperature distribution and ease of maintenance.
- Up to four metal organic precursor lines.
Applications
Papers
Paper 1:
Shoufa Liu, Xun Qiao, Yinwei Wang, Huan Xie, Ning Zhang, Dancheng Liu, “Magnetic and optical behaviors of SnO2-x thin films with oxygen vacancies prepared by atomic layer deposition”, Ceramics International, Volume 45, Issue 3, 2019, Pages 4128-4132, ISSN 0272-8842
https://www.sciencedirect.com/science/article/abs/pii/S0272884218331389
Paper 2:
Noriharu Takada, Noriyuki Taoka, Akio Ohta, Taishi Yamamoto, Nguyen Xuan Truyen, Hisashi Yamada, Tokio Takahashi, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu, and Seiichi Miyazaki. “Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures.” Japanese Journal of Applied Physics 58.SI (2019): SIIB22.
https://iopscience.iop.org/article/10.7567/1347-4065/ab26ac/meta
