Dual-chamber ALD for efficient deposition
The AD-8002LPC is a dual-chamber ALD system designed for high-precision thin film deposition from R&D to production. With an integrated vacuum cassette chamber, vacuum load lock, and two independent process chambers, the system provides efficient substrate handling and flexible process capability.
Supporting both thermal ALD and plasma-enhanced ALD (PEALD), the AD-8002LPC enables deposition of oxide, nitride, and conductive thin films with excellent thickness control, uniformity, and conformality over complex topographies. The system accommodates substrates up to ø8 inches and supports simultaneous batch processing of three ø4-inch wafers using dedicated tray-based transfer.
Key Features & Benefits
- Supports both thermal ALD and low-damage plasma-enhanced ALD (PEALD)
- Enables atomic-level control of film thickness for precise thin film deposition
- Provides highly conformal coating over high-aspect-ratio and complex structures
- Delivers excellent within-wafer uniformity and repeatable process performance
- Improves productivity through dual-chamber processing and flexible wafer handling
- Minimizes particle generation through optimized reaction chamber design
Applications
Papers
Paper 1:
Shoufa Liu, Xun Qiao, Yinwei Wang, Huan Xie, Ning Zhang, Dancheng Liu, “Magnetic and optical behaviors of SnO2-x thin films with oxygen vacancies prepared by atomic layer deposition”, Ceramics International, Volume 45, Issue 3, 2019, Pages 4128-4132, ISSN 0272-8842
https://www.sciencedirect.com/science/article/abs/pii/S0272884218331389
Paper 2:
Noriharu Takada, Noriyuki Taoka, Akio Ohta, Taishi Yamamoto, Nguyen Xuan Truyen, Hisashi Yamada, Tokio Takahashi, Mitsuhisa Ikeda, Katsunori Makihara, Mitsuaki Shimizu, and Seiichi Miyazaki. “Comparative study of photoluminescence properties obtained from SiO2/GaN and Al2O3/GaN structures.” Japanese Journal of Applied Physics 58.SI (2019): SIIB22.
https://iopscience.iop.org/article/10.7567/1347-4065/ab26ac/meta
