Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns

Yongfang Li^1,2, Akihiro Goryu¹, Kunhan Chen², Hiroshi Toshiyoshi² and Hiroyuki Fujita^2
1 Corporate Research & Development Center, Toshiba Corporation, Kawasaki, JAPAN
² The University of Tokyo, Tokyo, JAPAN
Presented at 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Samco open-load RIE system was used for silicon dry etching over oxide to transfer the oxide pattern in new lithography process development.

For our process capabilities of silicon dry etching for device fabrication please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF₂ Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process