Scientific Paper on Thin-film Edge Electrode Lithography Technologies from The University of Tokyo

August 15, 2015 Samco 2015 Customer, Samco Customer Publication, Si Etch, Silicon/Dielectrics Etch

Thin-film edge electrode lithography enabling low-cost collective transfer of nanopatterns

Yongfang Li1,2, Akihiro Goryu1, Kunhan Chen2, Hiroshi Toshiyoshi2 and Hiroyuki Fujita2
1 Corporate Research & Development Center, Toshiba Corporation, Kawasaki, JAPAN
2 The University of Tokyo, Tokyo, JAPAN
Presented at 2015 28th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Samco open-load RIE system was used for silicon dry etching over oxide to transfer the oxide pattern in new lithography process development.

Silicon Periodic Table

For our process capabilities of silicon dry etching for device fabrication please visit the process data pages below.
Si Dry Etching Process (RIE, ICP-RIE or XeF2 Etch)
Deep Silicon Trench/Via Hole Etching using Bosch Process